工(gong)作(zuo)原理光(guang)(guang)(guang)(guang)電(dian)(dian)(dian)(dian)(dian)三極(ji)(ji)(ji)(ji)(ji)(ji)管(guan)(guan)(guan)的(de)(de)(de)基(ji)(ji)本結(jie)構(gou)和普(pu)通(tong)三極(ji)(ji)(ji)(ji)(ji)(ji)管(guan)(guan)(guan)一(yi)樣，有(you)兩個(ge)PN結(jie)。圖1為(wei)NPN型，b-c結(jie)為(wei)受光(guang)(guang)(guang)(guang)結(jie)，吸收入(ru)射(she)光(guang)(guang)(guang)(guang)，基(ji)(ji)區面積較大，發射(she)區面積較小。、當光(guang)(guang)(guang)(guang)入(ru)射(she)到基(ji)(ji)極(ji)(ji)(ji)(ji)(ji)(ji)表(biao)面，產生光(guang)(guang)(guang)(guang)生電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)-空(kong)(kong)穴對，會在b-c結(jie)電(dian)(dian)(dian)(dian)(dian)場作(zuo)用(yong)(yong)下(xia)(xia)，電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)向集(ji)電(dian)(dian)(dian)(dian)(dian)極(ji)(ji)(ji)(ji)(ji)(ji)漂移，而(er)空(kong)(kong)穴移向基(ji)(ji)使基(ji)(ji)極(ji)(ji)(ji)(ji)(ji)(ji)電(dian)(dian)(dian)(dian)(dian)位升高，在c、e間外(wai)加電(dian)(dian)(dian)(dian)(dian)壓作(zuo)用(yong)(yong)下(xia)(xia)（c為(wei)+、e為(wei)-）大量電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)由發射(she)極(ji)(ji)(ji)(ji)(ji)(ji)注入(ru)，除少(shao)數在基(ji)(ji)極(ji)(ji)(ji)(ji)(ji)(ji)與空(kong)(kong)穴復合外(wai)，大量通(tong)過極(ji)(ji)(ji)(ji)(ji)(ji)薄的(de)(de)(de)基(ji)(ji)極(ji)(ji)(ji)(ji)(ji)(ji)被(bei)集(ji)電(dian)(dian)(dian)(dian)(dian)極(ji)(ji)(ji)(ji)(ji)(ji)收集(ji)，成為(wei)輸(shu)(shu)出光(guang)(guang)(guang)(guang)電(dian)(dian)(dian)(dian)(dian)流(liu)。總之，光(guang)(guang)(guang)(guang)電(dian)(dian)(dian)(dian)(dian)三極(ji)(ji)(ji)(ji)(ji)(ji)管(guan)(guan)(guan)工(gong)作(zuo)原理分為(wei)兩個(ge)過程：一(yi)是(shi)光(guang)(guang)(guang)(guang)電(dian)(dian)(dian)(dian)(dian)轉換；二(er)是(shi)光(guang)(guang)(guang)(guang)電(dian)(dian)(dian)(dian)(dian)流(liu)放大。比較大特點是(shi)輸(shu)(shu)出電(dian)(dian)(dian)(dian)(dian)流(liu)大，達毫安級(ji)。但響應(ying)速度比光(guang)(guang)(guang)(guang)電(dian)(dian)(dian)(dian)(dian)二(er)極(ji)(ji)(ji)(ji)(ji)(ji)管(guan)(guan)(guan)慢得多，溫度效應(ying)也(ye)比光(guang)(guang)(guang)(guang)電(dian)(dian)(dian)(dian)(dian)二(er)極(ji)(ji)(ji)(ji)(ji)(ji)管(guan)(guan)(guan)大得多。光(guang)(guang)(guang)(guang)電(dian)(dian)(dian)(dian)(dian)三極(ji)(ji)(ji)(ji)(ji)(ji)管(guan)(guan)(guan)的(de)(de)(de)典(dian)型應(ying)用(yong)(yong)電(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)1．亮通(tong)光(guang)(guang)(guang)(guang)電(dian)(dian)(dian)(dian)(dian)控(kong)制(zhi)電(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)當有(you)光(guang)(guang)(guang)(guang)線照射(she)于光(guang)(guang)(guang)(guang)電(dian)(dian)(dian)(dian)(dian)器(qi)件(jian)上時，使繼(ji)電(dian)(dian)(dian)(dian)(dian)器(qi)有(you)足夠的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)流(liu)而(er)動作(zuo)，這(zhe)種電(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)稱為(wei)亮通(tong)光(guang)(guang)(guang)(guang)電(dian)(dian)(dian)(dian)(dian)控(kong)制(zhi)電(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)，也(ye)叫(jiao)明通(tong)控(kong)制(zhi)電(dian)(dian)(dian)(dian)(dian)路(lu)(lu)(lu)。光(guang)(guang)(guang)(guang)電(dian)(dian)(dian)(dian)(dian)二(er)極(ji)(ji)(ji)(ji)(ji)(ji)管(guan)(guan)(guan)的(de)(de)(de)其(qi)他應(ying)用(yong)(yong)有(you)：用(yong)(yong)作(zuo)光(guang)(guang)(guang)(guang)傳感器(qi)的(de)(de)(de)光(guang)(guang)(guang)(guang)電(dian)(dian)(dian)(dian)(dian)二(er)極(ji)(ji)(ji)(ji)(ji)(ji)管(guan)(guan)(guan)。北京什(shen)么(me)是(shi)光(guang)(guang)(guang)(guang)電(dian)(dian)(dian)(dian)(dian)三極(ji)(ji)(ji)(ji)(ji)(ji)管(guan)(guan)(guan)采(cai)購

VI 光(guang)電(dian)(dian)(dian)(dian)二(er)(er)極管(guan)應用(yong)(yong)具體(ti)的光(guang)電(dian)(dian)(dian)(dian)二(er)(er)極管(guan)應用(yong)(yong)是(shi)(shi)：1. 光(guang)電(dian)(dian)(dian)(dian)管(guan)光(guang)電(dian)(dian)(dian)(dian)管(guan)本質上(shang)是(shi)(shi)一(yi)個大(da)面(mian)積的PN結(jie)(jie)。當(dang)光(guang)在一(yi)個 PN 結(jie)(jie)表面(mian)上(shang)發射時，例如 P 區表面(mian)，如果光(guang)子(zi)能量大(da)于半(ban)導(dao)體(ti)材料的禁帶帶寬(kuan)，則(ze) P 區中的每個光(guang)子(zi)都會產生一(yi)個自由電(dian)(dian)(dian)(dian)子(zi)-空穴(xue)對。電(dian)(dian)(dian)(dian)子(zi)-空穴(xue)對迅速向內擴散(san)，并在結(jie)(jie)電(dian)(dian)(dian)(dian)場下形(xing)成(cheng)與光(guang)強相關的電(dian)(dian)(dian)(dian)動勢。這時候，如果我們把它(ta)作為(wei)電(dian)(dian)(dian)(dian)源，連接(jie)到外部(bu)電(dian)(dian)(dian)(dian)路，只要有(you)光(guang)，它(ta)就會持續供電(dian)(dian)(dian)(dian)，這就是(shi)(shi)光(guang)電(dian)(dian)(dian)(dian)池。換(huan)句話(hua)說(shuo)，光(guang)電(dian)(dian)(dian)(dian)池是(shi)(shi)一(yi)種沒有(you)偏置電(dian)(dian)(dian)(dian)壓的PN結(jie)(jie)光(guang)電(dian)(dian)(dian)(dian)器(qi)件。它(ta)可以(yi)直接(jie)將光(guang)能轉(zhuan)化為(wei)電(dian)(dian)(dian)(dian)能。湖北使(shi)用(yong)(yong)光(guang)電(dian)(dian)(dian)(dian)三極管(guan)廠家現貨(huo)光(guang)電(dian)(dian)(dian)(dian)二(er)(er)三極管(guan)就選凱軒業科(ke)技(ji)，有(you)想法可以(yi)來我司咨詢。

光(guang)電二(er)(er)極管(guan)(guan)的(de)(de)材料1、硅2、鍺3、硫(liu)化(hua)鉛用于構造(zao)光(guang)電二(er)(er)極管(guan)(guan)的(de)(de)材料對(dui)于描(miao)述其性能(neng)(neng)(neng)非常重要(yao)，因為只有(you)具有(you)適當(dang)能(neng)(neng)(neng)量的(de)(de)光(guang)子(zi)才(cai)能(neng)(neng)(neng)激發帶隙中的(de)(de)電子(zi)，并(bing)能(neng)(neng)(neng)夠產生大量的(de)(de)光(guang)電流(liu)。重要(yao)的(de)(de)是(shi)要(yao)記住，基于硅的(de)(de)光(guang)電二(er)(er)極管(guan)(guan)具有(you)更大的(de)(de)帶隙，因此，與基于鍺的(de)(de)光(guang)電二(er)(er)極管(guan)(guan)相比，它能(neng)(neng)(neng)夠產生更少(shao)的(de)(de)噪聲。由于晶體(ti)管(guan)(guan)和IC也是(shi)由半導體(ti)材料制成的(de)(de)，并(bing)且包含pn結，因此可(ke)以(yi)像光(guang)電二(er)(er)極管(guan)(guan)一樣(yang)工作。這(zhe)是(shi)不可(ke)接受的(de)(de)，必須使用不透明的(de)(de)外(wai)殼才(cai)能(neng)(neng)(neng)消除這(zhe)種影響。盡管(guan)(guan)這(zhe)些(xie)對(dui)于高(gao)能(neng)(neng)(neng)輻射并(bing)不是(shi)完全不透明的(de)(de)，但仍可(ke)能(neng)(neng)(neng)導致IC因感(gan)應的(de)(de)光(guang)電流(liu)而(er)發生故障。

光(guang)電(dian)二(er)(er)極管的(de)(de)關(guan)鍵要求(qiu)之(zhi)一是收(shou)集光(guang)的(de)(de)合適區域(yu)。在標準PN結內，這(zhe)相對(dui)較小(xiao)，但(dan)可(ke)以(yi)(yi)通(tong)過使(shi)(shi)用PIN二(er)(er)極管來增加面(mian)積。由于(yu)本(ben)(ben)征區域(yu)包(bao)含(han)在用于(yu)集光(guang)的(de)(de)有(you)源(yuan)結中，因此(ci)用于(yu)集光(guang)的(de)(de)區域(yu)要大得多(duo)，從(cong)而(er)使(shi)(shi)PIN光(guang)電(dian)二(er)(er)極管更有(you)效。在光(guang)電(dian)二(er)(er)極管制造過程中，在P型和N型層(ceng)之(zhi)間插入了厚(hou)的(de)(de)本(ben)(ben)征層(ceng)。該中間本(ben)(ben)征層(ceng)可(ke)以(yi)(yi)是完(wan)全(quan)本(ben)(ben)征的(de)(de)，或(huo)者是非常輕(qing)摻雜的(de)(de)以(yi)(yi)使(shi)(shi)其(qi)成(cheng)為N-層(ceng)。在某些(xie)情況下，它可(ke)以(yi)(yi)作為外延(yan)層(ceng)生(sheng)長到襯底上(shang)，或(huo)者它可(ke)以(yi)(yi)包(bao)含(han)在襯底本(ben)(ben)身內。P+擴散層(ceng)的(de)(de)開發(fa)可(ke)以(yi)(yi)在重(zhong)摻雜的(de)(de)N型外延(yan)層(ceng)上(shang)進行。觸(chu)點采用金(jin)屬設(she)計(ji)，可(ke)制成(cheng)陽極和陰極等(deng)兩(liang)個端子(zi)。二(er)(er)極管的(de)(de)前部區域(yu)可(ke)以(yi)(yi)分(fen)(fen)為兩(liang)種類型，例如有(you)源(yuan)表(biao)(biao)面(mian)和無(wu)源(yuan)表(biao)(biao)面(mian)。非活(huo)性表(biao)(biao)面(mian)的(de)(de)設(she)計(ji)可(ke)以(yi)(yi)用二(er)(er)氧化(hua)硅(SiO2)完(wan)成(cheng)。在活(huo)動表(biao)(biao)面(mian)上(shang)，光(guang)線(xian)可(ke)以(yi)(yi)照射在其(qi)上(shang)，而(er)在非活(huo)動表(biao)(biao)面(mian)上(shang)，光(guang)線(xian)不能照射。通(tong)過抗反射材料覆蓋活(huo)性表(biao)(biao)面(mian)，使(shi)(shi)光(guang)的(de)(de)能量不會(hui)損失，比較高可(ke)以(yi)(yi)轉化(hua)為電(dian)流(liu)。+太陽能電(dian)池是一種半導體器件。當陽光(guang)照射到半導體上(shang)時，一部分(fen)(fen)被反射，其(qi)余部分(fen)(fen)被吸(xi)收(shou)或(huo)穿透(tou)半導體。

光(guang)電(dian)(dian)(dian)二(er)(er)(er)極(ji)(ji)管(guan)具有濾(lv)光(guang)器、內(nei)置透鏡(jing)和表面區(qu)域。當光(guang)電(dian)(dian)(dian)二(er)(er)(er)極(ji)(ji)管(guan)的(de)(de)(de)(de)表面積增加(jia)時(shi)，會(hui)縮短響應時(shi)間。很少有光(guang)電(dian)(dian)(dian)二(er)(er)(er)極(ji)(ji)管(guan)看起來像發光(guang)二(er)(er)(er)極(ji)(ji)管(guan) (LED)。它(ta)有兩(liang)個(ge)終端(duan)，如下所示。較小的(de)(de)(de)(de)端(duan)子用(yong)作(zuo)陰(yin)極(ji)(ji)，較長的(de)(de)(de)(de)端(duan)子用(yong)作(zuo)陽(yang)極(ji)(ji)。光(guang)電(dian)(dian)(dian)二(er)(er)(er)極(ji)(ji)管(guan)原(yuan)理 光(guang)電(dian)(dian)(dian)二(er)(er)(er)極(ji)(ji)管(guan)的(de)(de)(de)(de)工(gong)作(zuo)原(yuan)理是，當一個(ge)能(neng)量(liang)充足的(de)(de)(de)(de)光(guang)子撞擊二(er)(er)(er)極(ji)(ji)管(guan)時(shi)，會(hui)產(chan)生(sheng)一對(dui)電(dian)(dian)(dian)子空(kong)穴(xue)。這種機制也稱為內(nei)光(guang)電(dian)(dian)(dian)效應。如果(guo)在耗盡區(qu)結(jie)中出現(xian)吸收，則載(zai)流子被耗盡區(qu)的(de)(de)(de)(de)內(nei)置電(dian)(dian)(dian)場從結(jie)中去除。通常當用(yong)光(guang)照亮PN結(jie)的(de)(de)(de)(de)時(shi)，共價鍵被電(dian)(dian)(dian)離。這會(hui)產(chan)生(sheng)空(kong)穴(xue)和電(dian)(dian)(dian)子對(dui)。由于(yu)電(dian)(dian)(dian)子-空(kong)穴(xue)對(dui)的(de)(de)(de)(de)產(chan)生(sheng)而產(chan)生(sheng)光(guang)電(dian)(dian)(dian)流。當能(neng)量(liang)超過(guo) 1.1eV 的(de)(de)(de)(de)光(guang)子撞擊二(er)(er)(er)極(ji)(ji)管(guan)時(shi)，就會(hui)形成電(dian)(dian)(dian)子空(kong)穴(xue)對(dui)。當光(guang)子進(jin)入(ru)二(er)(er)(er)極(ji)(ji)管(guan)的(de)(de)(de)(de)耗盡區(qu)時(shi)，它(ta)以高能(neng)量(liang)撞擊原(yuan)子。這導致(zhi)從原(yuan)子結(jie)構中釋(shi)放電(dian)(dian)(dian)子。電(dian)(dian)(dian)子釋(shi)放后，產(chan)生(sheng)自(zi)由電(dian)(dian)(dian)子和空(kong)穴(xue)。光(guang)電(dian)(dian)(dian)二(er)(er)(er)三極(ji)(ji)管(guan)只(zhi)選凱軒業(ye)科技有限(xian)公司(si)，信賴之選。四川多功能(neng)光(guang)電(dian)(dian)(dian)三極(ji)(ji)管(guan)的(de)(de)(de)(de)作(zuo)用(yong)

光電二(er)極(ji)管(guan)的關鍵要求(qiu)之(zhi)一(yi)是收(shou)集光的合適區域。北京什(shen)么是光電三極(ji)管(guan)采(cai)購

光(guang)(guang)(guang)電(dian)二(er)極(ji)管(guan)(guan)(guan)的(de)(de)主要(yao)要(yao)求之一(yi)是(shi)(shi)確保比較大量的(de)(de)光(guang)(guang)(guang)到達本征(zheng)層。實現(xian)這(zhe)一(yi)點(dian)的(de)(de)方(fang)法之一(yi)是(shi)(shi)將電(dian)觸(chu)點(dian)放(fang)置在設備的(de)(de)側面，如圖(tu)所示。這(zhe)使得比較大量的(de)(de)光(guang)(guang)(guang)能夠(gou)到達有(you)效(xiao)區(qu)域。發(fa)現(xian)由于襯底是(shi)(shi)重摻雜的(de)(de)，由于這(zhe)不是(shi)(shi)有(you)源區(qu)，因此(ci)幾乎(hu)沒有(you)光(guang)(guang)(guang)損失。由于光(guang)(guang)(guang)在一(yi)定距(ju)離內大部分被吸(xi)收，本征(zheng)層的(de)(de)厚度(du)通常(chang)與此(ci)相(xiang)匹配。任何超過(guo)此(ci)厚度(du)的(de)(de)增加(jia)都會(hui)降(jiang)低操作速度(du)——這(zhe)是(shi)(shi)許多應用中的(de)(de)一(yi)個重要(yao)因素，并且(qie)不會(hui)**提高(gao)效(xiao)率。也可(ke)以(yi)(yi)讓光(guang)(guang)(guang)從結的(de)(de)一(yi)側進入光(guang)(guang)(guang)電(dian)二(er)極(ji)管(guan)(guan)(guan)。通過(guo)以(yi)(yi)這(zhe)種(zhong)方(fang)式操作光(guang)(guang)(guang)電(dian)二(er)極(ji)管(guan)(guan)(guan)，可(ke)以(yi)(yi)使本征(zheng)層變(bian)得更少(shao)以(yi)(yi)提高(gao)操作速度(du)，盡(jin)管(guan)(guan)(guan)效(xiao)率降(jiang)低。在某些情況下，可(ke)以(yi)(yi)使用異質結。這(zhe)種(zhong)結構形式具有(you)額外的(de)(de)靈活性，可(ke)以(yi)(yi)從基(ji)板(ban)接收光(guang)(guang)(guang)，并且(qie)具有(you)更大的(de)(de)能隙，使其對光(guang)(guang)(guang)透明(ming)。北京什(shen)么是(shi)(shi)光(guang)(guang)(guang)電(dian)三極(ji)管(guan)(guan)(guan)采購

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