N溝(gou)道增(zeng)強型(xing)MOS管(guan)的(de)結(jie)(jie)(jie)構，P型(xing)襯(chen)底上(shang)(shang)制(zhi)作兩個(ge)高摻雜的(de)N區，引(yin)出作為(wei)漏(lou)極(ji)(ji)D和(he)源極(ji)(ji)S，襯(chen)底上(shang)(shang)再制(zhi)作一塊絕(jue)緣層(ceng)，絕(jue)緣層(ceng)上(shang)(shang)在(zai)制(zhi)作一層(ceng)金屬(shu)電(dian)極(ji)(ji)，引(yin)出作為(wei)柵極(ji)(ji)G，即構成了常見的(de)N溝(gou)道增(zeng)強型(xing)MOS管(guan)。一般(ban)而(er)言，襯(chen)底B和(he)S極(ji)(ji)會連(lian)在(zai)一起(qi)，當在(zai)柵極(ji)(ji)處加正(zheng)電(dian)壓時，靠(kao)近(jin)襯(chen)底的(de)絕(jue)緣層(ceng)會產(chan)生感應電(dian)荷，當感應電(dian)荷足夠多(duo)時，D和(he)S之(zhi)(zhi)間(jian)形成導電(dian)溝(gou)道，只要DS之(zhi)(zhi)間(jian)有(you)電(dian)壓，即可產(chan)生電(dian)流(liu)。另外，從(cong)結(jie)(jie)(jie)構上(shang)(shang)看，襯(chen)底B和(he)S以(yi)及D之(zhi)(zhi)間(jian)都(dou)有(you)一個(ge)PN結(jie)(jie)(jie)，但是B和(he)S連(lian)在(zai)一起(qi)，所以(yi)BS之(zhi)(zhi)間(jian)的(de)PN結(jie)(jie)(jie)被短路(lu)，B（S）和(he)D之(zhi)(zhi)間(jian)的(de)PN結(jie)(jie)(jie)即是的(de)MOS的(de)寄(ji)生二極(ji)(ji)管(guan)。MOS管(guan)作用(yong)與特性是什么?重慶車規MOS管(guan)代理

MOS管(guan)(guan)重(zhong)要(yao)(yao)(yao)(yao)特性(xing)：3.寄生電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)驅(qu)動(dong)特性(xing)跟雙極性(xing)晶體管(guan)(guan)a相比(bi)，MOS管(guan)(guan)需(xu)要(yao)(yao)(yao)(yao)GS電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)高(gao)(gao)于(yu)(yu)一(yi)定的(de)(de)值才能導(dao)(dao)(dao)通(tong)(tong)(tong)，而(er)且(qie)還要(yao)(yao)(yao)(yao)求較(jiao)快的(de)(de)導(dao)(dao)(dao)通(tong)(tong)(tong)速(su)度(du)。在(zai)(zai)MOS管(guan)(guan)的(de)(de)結構中可以看到，在(zai)(zai)GS、GD之(zhi)間存在(zai)(zai)寄生電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)，而(er)MOS管(guan)(guan)的(de)(de)驅(qu)動(dong)，理(li)論上就是(shi)對(dui)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)的(de)(de)充放(fang)電(dian)(dian)(dian)(dian)(dian)。對(dui)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)的(de)(de)充電(dian)(dian)(dian)(dian)(dian)需(xu)要(yao)(yao)(yao)(yao)一(yi)個電(dian)(dian)(dian)(dian)(dian)流(liu)，由(you)于(yu)(yu)對(dui)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)充電(dian)(dian)(dian)(dian)(dian)瞬(shun)間可以把電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)看成(cheng)(cheng)短(duan)路(lu)，所以瞬(shun)間電(dian)(dian)(dian)(dian)(dian)流(liu)會比(bi)較(jiao)大。選擇/設計MOS管(guan)(guan)驅(qu)動(dong)時(shi)首先要(yao)(yao)(yao)(yao)留意的(de)(de)是(shi)可提(ti)供瞬(shun)間短(duan)路(lu)電(dian)(dian)(dian)(dian)(dian)流(liu)的(de)(de)大小;第二個要(yao)(yao)(yao)(yao)留意的(de)(de)是(shi)，普遍(bian)用(yong)于(yu)(yu)高(gao)(gao)速(su)驅(qu)動(dong)的(de)(de)NMOS，導(dao)(dao)(dao)通(tong)(tong)(tong)時(shi)需(xu)要(yao)(yao)(yao)(yao)柵(zha)極電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)大于(yu)(yu)源(yuan)極電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)。而(er)高(gao)(gao)速(su)驅(qu)動(dong)的(de)(de)MOS管(guan)(guan)導(dao)(dao)(dao)通(tong)(tong)(tong)時(shi)源(yuan)極電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)與漏極電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(VCC)相同，所以這時(shi)柵(zha)極導(dao)(dao)(dao)通(tong)(tong)(tong)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)要(yao)(yao)(yao)(yao)比(bi)VCC高(gao)(gao)4V或(huo)10V，而(er)且(qie)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)越(yue)高(gao)(gao)，導(dao)(dao)(dao)通(tong)(tong)(tong)速(su)度(du)越(yue)快，導(dao)(dao)(dao)通(tong)(tong)(tong)電(dian)(dian)(dian)(dian)(dian)阻也越(yue)小。重(zhong)慶車(che)規MOS管(guan)(guan)代理(li)mos反(fan)型(xing)層的(de)(de)形成(cheng)(cheng)原(yuan)因有哪些(xie)？

MOS的(de)(de)(de)運(yun)用(yong)(yong)：MOS管(guan)為(wei)(wei)壓控元件,你只要加到它的(de)(de)(de)壓控元件所需電(dian)壓就(jiu)(jiu)能使它導(dao)(dao)通(tong)(tong),它的(de)(de)(de)導(dao)(dao)通(tong)(tong)就(jiu)(jiu)像三極管(guan)在(zai)(zai)飽和狀態一樣,導(dao)(dao)通(tong)(tong)結(jie)的(de)(de)(de)壓降(jiang)小.這就(jiu)(jiu)是(shi)常(chang)說的(de)(de)(de)精典(dian)是(shi)開(kai)關(guan)作用(yong)(yong).去掉這個(ge)控制電(dian)壓經就(jiu)(jiu)截(jie)止.MOS管(guan)MOS管(guan)的(de)(de)(de)英(ying)文全稱叫MOSFET(MetalOxideSemiconductorFieldEffectTransistor)，即金屬氧化物半導(dao)(dao)體型(xing)(xing)場(chang)效(xiao)應管(guan)，屬于(yu)場(chang)效(xiao)應晶體管(guan)中的(de)(de)(de)絕緣柵(zha)型(xing)(xing)。因此，MOS管(guan)有時被稱為(wei)(wei)場(chang)效(xiao)應管(guan)。在(zai)(zai)一般電(dian)子(zi)電(dian)路中，MOS管(guan)通(tong)(tong)常(chang)被用(yong)(yong)于(yu)放大電(dian)路或(huo)開(kai)關(guan)電(dian)路。而在(zai)(zai)主板上的(de)(de)(de)電(dian)源(yuan)穩(wen)壓電(dian)路中，MOSFET扮演(yan)的(de)(de)(de)角色主要是(shi)判斷電(dian)位，它在(zai)(zai)主板上常(chang)用(yong)(yong)“Q”加數(shu)字表(biao)示。

例(li)如(ru)有(you)一(yi)款42寸液晶電(dian)(dian)(dian)視(shi)的(de)(de)(de)背光(guang)高壓板損壞(huai)(huai)(huai)，經過檢(jian)查是(shi)(shi)(shi)內部(bu)的(de)(de)(de)大功(gong)率MOS管(guan)(guan)損壞(huai)(huai)(huai)，因為無原(yuan)(yuan)型號的(de)(de)(de)代換，就選用(yong)了一(yi)個，電(dian)(dian)(dian)壓、電(dian)(dian)(dian)流(liu)、功(gong)率均不小于原(yuan)(yuan)來的(de)(de)(de)MOS管(guan)(guan)替(ti)換，結果是(shi)(shi)(shi)背光(guang)管(guan)(guan)出(chu)現(xian)(xian)連續的(de)(de)(de)閃爍(shuo)（啟動困難），后面還是(shi)(shi)(shi)換上原(yuan)(yuan)來一(yi)樣(yang)型號的(de)(de)(de)才解決問題。檢(jian)測到(dao)MOS管(guan)(guan)損壞(huai)(huai)(huai)后，更(geng)(geng)換時其(qi)周邊的(de)(de)(de)灌(guan)(guan)流(liu)電(dian)(dian)(dian)路的(de)(de)(de)元件(jian)也(ye)必須(xu)全部(bu)更(geng)(geng)換，因為該(gai)MOS管(guan)(guan)的(de)(de)(de)損壞(huai)(huai)(huai)也(ye)可能是(shi)(shi)(shi)灌(guan)(guan)流(liu)電(dian)(dian)(dian)路元件(jian)的(de)(de)(de)欠佳(jia)引起MOS管(guan)(guan)損壞(huai)(huai)(huai)。即便(bian)是(shi)(shi)(shi)MOS管(guan)(guan)本身原(yuan)(yuan)因損壞(huai)(huai)(huai)，在(zai)MOS管(guan)(guan)擊穿的(de)(de)(de)瞬間，灌(guan)(guan)流(liu)電(dian)(dian)(dian)路元件(jian)也(ye)受到(dao)傷害，也(ye)應該(gai)更(geng)(geng)換。就像我們有(you)很(hen)多(duo)高明的(de)(de)(de)維修(xiu)師(shi)傅在(zai)修(xiu)理A3開關(guan)電(dian)(dian)(dian)源時；只要(yao)發現(xian)(xian)開關(guan)管(guan)(guan)擊穿，就也(ye)把前(qian)面的(de)(de)(de)2SC3807激勵管(guan)(guan)一(yi)起更(geng)(geng)換一(yi)樣(yang)道理（盡(jin)管(guan)(guan)2SC3807管(guan)(guan)，用(yong)萬(wan)用(yong)表測量是(shi)(shi)(shi)好(hao)的(de)(de)(de)）。mos管(guan)(guan)和場效應管(guan)(guan)有(you)什么區別？

MOS管(guan)(guan)(guan)的(de)(de)英(ying)文全稱叫MOSFET(MetalOxideSemiconductorFieldEffectTransistor)，即金(jin)屬氧(yang)化(hua)物半導(dao)體(ti)型(xing)場效應(ying)管(guan)(guan)(guan)，屬于(yu)場效應(ying)管(guan)(guan)(guan)中(zhong)的(de)(de)絕(jue)緣(yuan)柵型(xing)。因此，MOS管(guan)(guan)(guan)有(you)時(shi)被稱為絕(jue)緣(yuan)柵場效應(ying)管(guan)(guan)(guan)。在(zai)一(yi)(yi)(yi)般電(dian)(dian)(dian)(dian)子電(dian)(dian)(dian)(dian)路(lu)(lu)中(zhong)，MOS管(guan)(guan)(guan)通常(chang)被用(yong)于(yu)放大(da)電(dian)(dian)(dian)(dian)路(lu)(lu)或開關(guan)電(dian)(dian)(dian)(dian)路(lu)(lu)。MOS管(guan)(guan)(guan)的(de)(de)構造在(zai)一(yi)(yi)(yi)塊(kuai)摻(chan)雜(za)濃度(du)(du)較低的(de)(de)P型(xing)半導(dao)體(ti)硅襯底上(shang)，用(yong)半導(dao)體(ti)光刻、擴散工藝(yi)制(zhi)作(zuo)兩(liang)個(ge)(ge)(ge)高摻(chan)雜(za)濃度(du)(du)的(de)(de)N+區，并(bing)用(yong)金(jin)屬鋁(lv)引出兩(liang)個(ge)(ge)(ge)電(dian)(dian)(dian)(dian)極，分別作(zuo)為漏極D和(he)源極S。然后(hou)在(zai)漏極和(he)源極之間(jian)的(de)(de)P型(xing)半導(dao)體(ti)表(biao)面(mian)復蓋一(yi)(yi)(yi)層很薄的(de)(de)二氧(yang)化(hua)硅（Si02）絕(jue)緣(yuan)層膜，在(zai)再(zai)這個(ge)(ge)(ge)絕(jue)緣(yuan)層膜上(shang)裝上(shang)一(yi)(yi)(yi)個(ge)(ge)(ge)鋁(lv)電(dian)(dian)(dian)(dian)極，作(zuo)為柵極G。這就構成了一(yi)(yi)(yi)個(ge)(ge)(ge)N溝道(dao)（NPN型(xing)）增強型(xing)MOS管(guan)(guan)(guan)。顯然它的(de)(de)柵極和(he)其它電(dian)(dian)(dian)(dian)極間(jian)是絕(jue)緣(yuan)的(de)(de)。有(you)關(guan)MOS晶體(ti)管(guan)(guan)(guan)分類的(de)(de)幾個(ge)(ge)(ge)問題？重慶汽車級MOS管(guan)(guan)(guan)供(gong)應(ying)商(shang)地(di)址

MOS管在形成導(dao)電(dian)溝道時，出(chu)現的耗盡層和(he)反型層有什么區別？重(zhong)慶車(che)規MOS管代理(li)

如(ru)何(he)選擇(ze)NMOS明白了NMOS的(de)(de)(de)(de)用法(fa)之后(hou)呢，我(wo)們(men)來看一(yi)(yi)下要(yao)如(ru)何(he)選擇(ze)一(yi)(yi)個(ge)(ge)(ge)合適的(de)(de)(de)(de)NMOS，也(ye)就(jiu)是(shi)NMOS是(shi)如(ru)何(he)選型的(de)(de)(de)(de)。那對于一(yi)(yi)個(ge)(ge)(ge)初學者來說(shuo)，有(you)四個(ge)(ge)(ge)比較(jiao)重要(yao)的(de)(de)(de)(de)參(can)數需(xu)要(yao)來關注一(yi)(yi)下。首先(xian)是(shi)封(feng)裝，第二個(ge)(ge)(ge)是(shi)vgsth，第三個(ge)(ge)(ge)是(shi)Rdson上，第四個(ge)(ge)(ge)是(shi)Cgs。封(feng)裝比較(jiao)簡單，它指的(de)(de)(de)(de)就(jiu)是(shi)一(yi)(yi)個(ge)(ge)(ge)MOS管這個(ge)(ge)(ge)外形(xing)和尺(chi)寸的(de)(de)(de)(de)種類(lei)也(ye)有(you)很多。一(yi)(yi)般(ban)來說(shuo)封(feng)裝越大，它能(neng)承受的(de)(de)(de)(de)電流(liu)也(ye)就(jiu)越大。為了搞明白另(ling)外三個(ge)(ge)(ge)參(can)數呢，我(wo)們(men)先(xian)要(yao)來介紹一(yi)(yi)下NMOS的(de)(de)(de)(de)等效模型。

MOS其實(shi)(shi)可以看成是一個由(you)電(dian)(dian)壓控(kong)制的(de)(de)(de)(de)(de)(de)電(dian)(dian)阻。這個電(dian)(dian)壓指的(de)(de)(de)(de)(de)(de)是g、s兩端的(de)(de)(de)(de)(de)(de)電(dian)(dian)壓差，電(dian)(dian)阻指的(de)(de)(de)(de)(de)(de)是d、s之間的(de)(de)(de)(de)(de)(de)電(dian)(dian)阻。這個電(dian)(dian)阻的(de)(de)(de)(de)(de)(de)大(da)小呢，它會隨著g、s電(dian)(dian)壓的(de)(de)(de)(de)(de)(de)變化(hua)而產(chan)生變化(hua)。當(dang)然(ran)它們不(bu)是線性對應的(de)(de)(de)(de)(de)(de)關(guan)系，實(shi)(shi)際(ji)的(de)(de)(de)(de)(de)(de)關(guan)系差不(bu)多像這樣的(de)(de)(de)(de)(de)(de)，橫坐標(biao)是g、s電(dian)(dian)壓差。重慶(qing)車規MOS管代理

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