汽車IGBT模塊(kuai)測(ce)試標(biao)準下(xia)功(gong)(gong)率(lv)循(xun)(xun)環和(he)溫度(du)循(xun)(xun)環作為表(biao)示的(de)(de)耐久測(ce)試，要求極為嚴格，例如(ru)功(gong)(gong)率(lv)循(xun)(xun)環次數可能(neng)從幾萬(wan)次到十萬(wan)次不(bu)等。主要目的(de)(de)是(shi)測(ce)試鍵(jian)合(he)(he)線、焊(han)接層等機械(xie)連(lian)接層的(de)(de)耐久情況。測(ce)試時的(de)(de)失(shi)效機理(li)主要是(shi)，芯(xin)片(pian)、鍵(jian)合(he)(he)線、DBC、焊(han)料(liao)等的(de)(de)熱膨脹(zhang)系數不(bu)一(yi)致，導致鍵(jian)合(he)(he)線脫(tuo)落、斷裂(lie)，芯(xin)片(pian)焊(han)層分離，以及焊(han)料(liao)老化等。隨著國內新(xin)能(neng)源(yuan)汽車產(chan)業的(de)(de)快速發展，產(chan)業鏈上(shang)游大有(you)逐步完成國產(chan)替代(dai)，甚(shen)至帶領世界的(de)(de)趨勢，諸(zhu)如(ru)整車品(pin)牌、動(dong)力電(dian)池(chi)、電(dian)池(chi)材料(liao)等等已經走(zou)得比較靠前(qian)，而汽車電(dian)控IGBT模塊(kuai)是(shi)新(xin)能(neng)源(yuan)汽車主要的(de)(de)功(gong)(gong)率(lv)器件。IGBT自動(dong)化設備(bei)在生產(chan)中起到關鍵(jian)作用，實現了IGBT模塊(kuai)的(de)(de)高效封裝。高精(jing)度(du)真空爐生產(chan)

基于(yu)雙基板(ban)(ban)堆(dui)疊和(he)面(mian)互連(lian)(lian)(lian)，采(cai)(cai)(cai)用(yong)上(shang)(shang)(shang)(shang)下雙基板(ban)(ban)堆(dui)疊的(de)無鍵(jian)合(he)(he)線(xian)(xian)平面(mian)互連(lian)(lian)(lian)封(feng)裝(zhuang)(zhuang)。該(gai)(gai)封(feng)裝(zhuang)(zhuang)采(cai)(cai)(cai)用(yong)Wolfspeed第三代(dai)10kVSiCMOSFET芯片(pian)(pian)構建。芯片(pian)(pian)焊(han)接(jie)(jie)在下堆(dui)疊基板(ban)(ban)上(shang)(shang)(shang)(shang)，芯片(pian)(pian)正面(mian)電(dian)(dian)(dian)極采(cai)(cai)(cai)用(yong)金屬Mo柱連(lian)(lian)(lian)接(jie)(jie)，Mo柱上(shang)(shang)(shang)(shang)方連(lian)(lian)(lian)接(jie)(jie)帶(dai)有通(tong)孔的(de)上(shang)(shang)(shang)(shang)堆(dui)疊基板(ban)(ban)。在上(shang)(shang)(shang)(shang)堆(dui)疊基板(ban)(ban)的(de)上(shang)(shang)(shang)(shang)表面(mian)，采(cai)(cai)(cai)用(yong)高密(mi)度(du)彈簧銷(xiao)端(duan)子(zi)，將(jiang)芯片(pian)(pian)電(dian)(dian)(dian)極連(lian)(lian)(lian)接(jie)(jie)到PCB母線(xian)(xian)。Mo柱互連(lian)(lian)(lian)取代(dai)鍵(jian)合(he)(he)線(xian)(xian)連(lian)(lian)(lian)接(jie)(jie)，提(ti)高了機械(xie)可靠性，降低了封(feng)裝(zhuang)(zhuang)雜散(san)電(dian)(dian)(dian)感和(he)電(dian)(dian)(dian)阻(zu)(zu)。該(gai)(gai)封(feng)裝(zhuang)(zhuang)在芯片(pian)(pian)的(de)兩側均采(cai)(cai)(cai)用(yong)平面(mian)連(lian)(lian)(lian)接(jie)(jie)，少(shao)部(bu)分熱(re)(re)(re)量可通(tong)過芯片(pian)(pian)上(shang)(shang)(shang)(shang)表面(mian)傳遞給上(shang)(shang)(shang)(shang)部(bu)堆(dui)疊基板(ban)(ban)，但由于(yu)上(shang)(shang)(shang)(shang)基板(ban)(ban)上(shang)(shang)(shang)(shang)表面(mian)為彈簧端(duan)子(zi)連(lian)(lian)(lian)接(jie)(jie)，不利(li)于(yu)熱(re)(re)(re)量傳遞，芯片(pian)(pian)耗(hao)散(san)熱(re)(re)(re)主要從下堆(dui)疊基板(ban)(ban)散(san)熱(re)(re)(re)，使該(gai)(gai)封(feng)裝(zhuang)(zhuang)只具有單一散(san)熱(re)(re)(re)通(tong)路。通(tong)過在下堆(dui)疊基板(ban)(ban)底(di)部(bu)集(ji)成定制(zhi)的(de)直接(jie)(jie)射流噴射冷卻器，模塊(kuai)結到環境熱(re)(re)(re)阻(zu)(zu)達到0.38℃/W。非標(biao)工業模塊(kuai)自動組裝(zhuang)(zhuang)線(xian)(xian)批發(fa)(fa)價格IGBT自動化設備推動了IGBT模塊(kuai)技(ji)術的(de)發(fa)(fa)展，使其(qi)具備通(tong)態(tai)壓降低、開關(guan)速度(du)快等優點。

采(cai)用納米銀燒(shao)結將Mo柱、SiC芯(xin)(xin)片(pian)和Cu柱連(lian)(lian)接到基(ji)板上(shang)。相比(bi)合金(jin)焊料，燒(shao)結銀導熱(re)性(xing)(xing)(xing)(xing)能優(you)異，有助于降低芯(xin)(xin)片(pian)連(lian)(lian)接層的(de)(de)(de)(de)熱(re)阻(zu)。可在兩側基(ji)板表面(mian)分別連(lian)(lian)接熱(re)沉進(jin)行雙(shuang)(shuang)面(mian)散(san)熱(re)。該(gai)雙(shuang)(shuang)面(mian)散(san)熱(re)封(feng)裝模(mo)塊(kuai)的(de)(de)(de)(de)結殼(ke)熱(re)阻(zu)只(zhi)有0.17℃/W，封(feng)裝耗散(san)功率(lv)密(mi)度超過(guo)200W/cm2，而同電壓等級的(de)(de)(de)(de)CreeXHV-9模(mo)塊(kuai)的(de)(de)(de)(de)結殼(ke)熱(re)阻(zu)為(wei)0.468℃/W，表明該(gai)雙(shuang)(shuang)面(mian)散(san)熱(re)封(feng)裝具(ju)有明顯的(de)(de)(de)(de)熱(re)性(xing)(xing)(xing)(xing)能優(you)勢。為(wei)進(jin)一步優(you)化雙(shuang)(shuang)面(mian)散(san)熱(re)封(feng)裝器件的(de)(de)(de)(de)熱(re)性(xing)(xing)(xing)(xing)能，提(ti)出了柔(rou)(rou)性(xing)(xing)(xing)(xing)印刷電路板互(hu)連(lian)(lian)的(de)(de)(de)(de)平面(mian)封(feng)裝結構，采(cai)用Cu-Mo-Cu(CMC)復(fu)合金(jin)屬塊(kuai)滿足絕(jue)緣要求。柔(rou)(rou)性(xing)(xing)(xing)(xing)PCB板既可以(yi)(yi)作為(wei)芯(xin)(xin)片(pian)上(shang)較小(xiao)特征的(de)(de)(de)(de)互(hu)連(lian)(lian)，還(huan)可以(yi)(yi)代替傳統的(de)(de)(de)(de)母線，縮短(duan)功率(lv)模(mo)塊(kuai)的(de)(de)(de)(de)電氣回(hui)路長度減(jian)小(xiao)寄生電感。

TFC金(jin)屬(shu)化(hua)(hua)是(shi)一(yi)(yi)(yi)種(zhong)在(zai)AlN陶瓷基(ji)(ji)板(ban)上(shang)(shang)制(zhi)作(zuo)銅(tong)(tong)(tong)膜的(de)過程，它通(tong)(tong)過使(shi)用銅(tong)(tong)(tong)漿料和(he)絲網印刷技術(shu)，將(jiang)(jiang)銅(tong)(tong)(tong)漿料均勻地(di)涂布在(zai)基(ji)(ji)板(ban)上(shang)(shang)。在(zai)涂布完(wan)成(cheng)后(hou)，通(tong)(tong)過850℃真(zhen)空(kong)燒結(jie)(jie)(jie)處理，使(shi)銅(tong)(tong)(tong)膜與基(ji)(ji)板(ban)牢固(gu)結(jie)(jie)(jie)合(he)(he)，并形成(cheng)TFC覆(fu)(fu)(fu)銅(tong)(tong)(tong)AlN基(ji)(ji)板(ban)。DBC金(jin)屬(shu)化(hua)(hua)則(ze)是(shi)一(yi)(yi)(yi)種(zhong)將(jiang)(jiang)AlN基(ji)(ji)板(ban)與銅(tong)(tong)(tong)箔(bo)進(jin)行(xing)冶金(jin)結(jie)(jie)(jie)合(he)(he)的(de)制(zhi)作(zuo)方(fang)(fang)法。首先將(jiang)(jiang)AlN基(ji)(ji)板(ban)與銅(tong)(tong)(tong)箔(bo)精(jing)確對(dui)齊，然后(hou)將(jiang)(jiang)它們裝配在(zai)一(yi)(yi)(yi)起，施加一(yi)(yi)(yi)定的(de)壓力。隨后(hou)，在(zai)控制(zhi)爐內氧(yang)(yang)分壓的(de)情況(kuang)下，將(jiang)(jiang)溫(wen)度(du)加熱(re)至1065℃，使(shi)得銅(tong)(tong)(tong)箔(bo)表(biao)面的(de)氧(yang)(yang)化(hua)(hua)物(wu)薄層(ceng)與AlN基(ji)(ji)板(ban)表(biao)面氧(yang)(yang)化(hua)(hua)產生的(de)三氧(yang)(yang)化(hua)(hua)二鋁（Al2O3）發(fa)生化(hua)(hua)學反應，生成(cheng)一(yi)(yi)(yi)種(zhong)稱為(wei)CuAlO2的(de)化(hua)(hua)合(he)(he)物(wu)。這種(zhong)化(hua)(hua)合(he)(he)物(wu)將(jiang)(jiang)銅(tong)(tong)(tong)箔(bo)和(he)AlN基(ji)(ji)板(ban)緊密地(di)結(jie)(jie)(jie)合(he)(he)在(zai)一(yi)(yi)(yi)起，形成(cheng)冶金(jin)結(jie)(jie)(jie)合(he)(he)。而AMB金(jin)屬(shu)化(hua)(hua)是(shi)一(yi)(yi)(yi)種(zhong)在(zai)AlN表(biao)面制(zhi)作(zuo)銅(tong)(tong)(tong)膜的(de)另一(yi)(yi)(yi)種(zhong)方(fang)(fang)法。首先，在(zai)AlN表(biao)面涂布一(yi)(yi)(yi)層(ceng)含有(you)銀（Ag）、銅(tong)(tong)(tong)（Cu）和(he)鈦(tai)（Ti）的(de)焊膏，然后(hou)覆(fu)(fu)(fu)蓋一(yi)(yi)(yi)層(ceng)銅(tong)(tong)(tong)箔(bo)。接(jie)下來，將(jiang)(jiang)樣件(jian)置于真(zhen)空(kong)環境中，加熱(re)至890℃并保持一(yi)(yi)(yi)段(duan)時間，這樣就可以使(shi)AlN表(biao)面上(shang)(shang)的(de)焊膏與銅(tong)(tong)(tong)箔(bo)發(fa)生反應，形成(cheng)一(yi)(yi)(yi)層(ceng)堅固(gu)的(de)銅(tong)(tong)(tong)膜。這樣制(zhi)作(zuo)的(de)覆(fu)(fu)(fu)銅(tong)(tong)(tong)AlN基(ji)(ji)板(ban)具有(you)良好的(de)導(dao)熱(re)性能，可用于高功率電子器件(jian)的(de)封裝。IGBT自動化(hua)(hua)設備(bei)負責(ze)封裝和(he)端子成(cheng)形，保證產品的(de)完(wan)整性和(he)可靠性。

采用(yong)燒結銀(yin)工藝將芯(xin)(xin)(xin)(xin)片(pian)(pian)倒(dao)裝(zhuang)燒結到DBC基板上(shang)，芯(xin)(xin)(xin)(xin)片(pian)(pian)背(bei)面(mian)(mian)(mian)(mian)采用(yong)銅(tong)(tong)夾連接，銅(tong)(tong)夾上(shang)連接散(san)(san)熱(re)(re)器(qi)，形(xing)成芯(xin)(xin)(xin)(xin)片(pian)(pian)上(shang)表(biao)(biao)面(mian)(mian)(mian)(mian)的(de)(de)熱(re)(re)通路。采用(yong)聚合物熱(re)(re)界面(mian)(mian)(mian)(mian)材料在模塊(kuai)的(de)(de)上(shang)下(xia)表(biao)(biao)面(mian)(mian)(mian)(mian)連接兩(liang)個陶瓷散(san)(san)熱(re)(re)器(qi)，進行(xing)雙面(mian)(mian)(mian)(mian)散(san)(san)熱(re)(re)。由于(yu)芯(xin)(xin)(xin)(xin)片(pian)(pian)倒(dao)裝(zhuang)鍵(jian)合面(mian)(mian)(mian)(mian)積(ji)只占芯(xin)(xin)(xin)(xin)片(pian)(pian)面(mian)(mian)(mian)(mian)積(ji)的(de)(de)很(hen)小一(yi)部分，接觸面(mian)(mian)(mian)(mian)積(ji)較小成為限制該(gai)封裝(zhuang)散(san)(san)熱(re)(re)性(xing)(xing)能的(de)(de)關鍵(jian)。該(gai)封裝(zhuang)中(zhong)倒(dao)裝(zhuang)芯(xin)(xin)(xin)(xin)片(pian)(pian)鍵(jian)合層(ceng)和(he)(he)銅(tong)(tong)夾連接層(ceng)對模塊(kuai)熱(re)(re)性(xing)(xing)能的(de)(de)影(ying)響比連接散(san)(san)熱(re)(re)器(qi)的(de)(de)熱(re)(re)界面(mian)(mian)(mian)(mian)材料的(de)(de)影(ying)響更加(jia)明顯(xian)。增大倒(dao)裝(zhuang)芯(xin)(xin)(xin)(xin)片(pian)(pian)的(de)(de)鍵(jian)合面(mian)(mian)(mian)(mian)積(ji)有(you)助(zhu)于(yu)降(jiang)低倒(dao)裝(zhuang)芯(xin)(xin)(xin)(xin)片(pian)(pian)鍵(jian)合層(ceng)的(de)(de)熱(re)(re)阻，有(you)利于(yu)降(jiang)低芯(xin)(xin)(xin)(xin)片(pian)(pian)結溫(wen)。研究表(biao)(biao)明，通過(guo)增大芯(xin)(xin)(xin)(xin)片(pian)(pian)電(dian)極金屬(shu)化(hua)面(mian)(mian)(mian)(mian)積(ji)，如(ru)將芯(xin)(xin)(xin)(xin)片(pian)(pian)電(dian)極面(mian)(mian)(mian)(mian)積(ji)占比從(cong)22%提(ti)高到88%，采用(yong)倒(dao)裝(zhuang)鍵(jian)合，芯(xin)(xin)(xin)(xin)片(pian)(pian)結溫(wen)可(ke)降(jiang)低20-30℃。建議(yi)可(ke)以通過(guo)采用(yong)擴大芯(xin)(xin)(xin)(xin)片(pian)(pian)電(dian)極金屬(shu)化(hua)面(mian)(mian)(mian)(mian)積(ji)，增大鍵(jian)合面(mian)(mian)(mian)(mian)積(ji)的(de)(de)方式來降(jiang)低熱(re)(re)阻。動態測試IGBT自(zi)動化(hua)設備可(ke)分析和(he)(he)優(you)化(hua)器(qi)件在過(guo)溫(wen)和(he)(he)過(guo)壓情況下(xia)的(de)(de)性(xing)(xing)能。高精度真空爐生(sheng)產

IGBT自動(dong)化設備的應用使(shi)功率半(ban)導體模(mo)塊封裝過(guo)程更高(gao)(gao)效和準確。高(gao)(gao)精度真空(kong)爐生產

芯片(pian)下表(biao)面(mian)焊接(jie)連(lian)接(jie)，上表(biao)面(mian)采(cai)(cai)用(yong)載銀硅(gui)樹(shu)脂(zhi)連(lian)接(jie)，以(yi)進一步降低(di)熱(re)(re)機械應(ying)力(li)。柵極端(duan)子與(yu)聚酰亞胺柔性電路(lu)板連(lian)接(jie)。通過(guo)空氣(qi)(qi)實現散熱(re)(re)器與(yu)環(huan)境間的(de)(de)(de)(de)電氣(qi)(qi)絕緣(yuan)。芯片(pian)兩側的(de)(de)(de)(de)基(ji)板表(biao)面(mian)為(wei)翅片(pian)狀熱(re)(re)沉(chen)的(de)(de)(de)(de)連(lian)接(jie)提供(gong)了平臺，可使用(yong)介電流體(ti)(如空氣(qi)(qi))進行冷(leng)卻，該(gai)PCoB雙面(mian)風冷(leng)模塊具有與(yu)液(ye)冷(leng)等效(xiao)的(de)(de)(de)(de)散熱(re)(re)性能(neng)(neng)。研究(jiu)表(biao)明，采(cai)(cai)用(yong)該(gai)封裝的(de)(de)(de)(de)1200V/50ASiC肖特基(ji)二極管在空氣(qi)(qi)流速為(wei)15CFM的(de)(de)(de)(de)條件下測試得(de)到(dao)模塊結到(dao)環(huan)境的(de)(de)(de)(de)熱(re)(re)阻(zu)只為(wei)0.5℃/W。在沒有散熱(re)(re)措施時，結到(dao)環(huan)境的(de)(de)(de)(de)熱(re)(re)阻(zu)也低(di)于(yu)5℃/W。而對于(yu)類似大小的(de)(de)(de)(de)芯片(pian)，采(cai)(cai)用(yong)25mil的(de)(de)(de)(de)AlN陶瓷基(ji)板和(he)12mil的(de)(de)(de)(de)鍍鎳銅底板封裝的(de)(de)(de)(de)傳統功(gong)率模塊的(de)(de)(de)(de)結殼熱(re)(re)阻(zu)已(yi)達到(dao)約0.4℃/W。將該(gai)模塊通過(guo)導熱(re)(re)脂(zhi)連(lian)接(jie)在液(ye)冷(leng)散熱(re)(re)板上，結到(dao)冷(leng)卻液(ye)體(ti)的(de)(de)(de)(de)熱(re)(re)阻(zu)為(wei)0.6~1℃/W。表(biao)明該(gai)PCoB雙面(mian)空冷(leng)模塊具有與(yu)傳統液(ye)冷(leng)模塊相當的(de)(de)(de)(de)熱(re)(re)性能(neng)(neng)。高(gao)精(jing)度真空爐生(sheng)產

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