這個(ge)(ge)反電(dian)(dian)(dian)動勢可(ke)以對電(dian)(dian)(dian)容(rong)進行(xing)充(chong)電(dian)(dian)(dian)。這樣，正極(ji)(ji)的(de)(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)壓也不(bu)會(hui)上升。如下圖(tu)：坦白(bai)說(shuo)(shuo)，上面(mian)(mian)的(de)(de)(de)(de)(de)(de)(de)這個(ge)(ge)解(jie)釋節我(wo)(wo)(wo)寫(xie)得(de)不(bu)是(shi)(shi)很有信(xin)心，我(wo)(wo)(wo)希望有高(gao)人出(chu)來(lai)指點一(yi)下。歡(huan)迎朋(peng)友(you)在(zai)(zai)評論中(zhong)留言。我(wo)(wo)(wo)會(hui)在(zai)(zai)后(hou)面(mian)(mian)寫(xie)《變(bian)(bian)頻器(qi)的(de)(de)(de)(de)(de)(de)(de)輸出(chu)電(dian)(dian)(dian)流(liu)》一(yi)節中(zhong)，通過(guo)實際(ji)的(de)(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)流(liu)照(zhao)片(pian)，驗(yan)證(zheng)這個(ge)(ge)二(er)極(ji)(ji)管(guan)(guan)的(de)(de)(de)(de)(de)(de)(de)作用(yong)。現在(zai)(zai)來(lai)解(jie)釋在(zai)(zai)《變(bian)(bian)頻器(qi)整(zheng)(zheng)流(liu)部(bu)分元件(jian)(jian)》中(zhong)說(shuo)(shuo)，在(zai)(zai)《電(dian)(dian)(dian)流(liu)整(zheng)(zheng)流(liu)的(de)(de)(de)(de)(de)(de)(de)方(fang)式分類》中(zhong)講的(de)(de)(de)(de)(de)(de)(de)“也可(ke)以用(yong)IGBT進行(xing)整(zheng)(zheng)流(liu)”有問題的(de)(de)(de)(de)(de)(de)(de)。IGBT,通常就(jiu)是(shi)(shi)一(yi)個(ge)(ge)元件(jian)(jian)，它不(bu)帶(dai)續流(liu)二(er)極(ji)(ji)管(guan)(guan)。即是(shi)(shi)這個(ge)(ge)符(fu)號(hao)：商用(yong)IGBT模塊，都是(shi)(shi)將“IGBT+續流(liu)二(er)極(ji)(ji)管(guan)(guan)”集成在(zai)(zai)一(yi)個(ge)(ge)整(zheng)(zheng)體(ti)部(bu)件(jian)(jian)中(zhong)，即下面(mian)(mian)的(de)(de)(de)(de)(de)(de)(de)這個(ge)(ge)符(fu)號(hao)。在(zai)(zai)工廠中(zhong)，我(wo)(wo)(wo)們(men)(men)稱這個(ge)(ge)整(zheng)(zheng)體(ti)部(bu)件(jian)(jian)叫IGBT，不(bu)會(hui)說(shuo)(shuo)“IGBT模塊”。我(wo)(wo)(wo)們(men)(men)可(ke)以用(yong)“IGBT模塊”搭接一(yi)個(ge)(ge)橋式整(zheng)(zheng)流(liu)電(dian)(dian)(dian)路，利用(yong)它的(de)(de)(de)(de)(de)(de)(de)續流(liu)二(er)極(ji)(ji)管(guan)(guan)實現整(zheng)(zheng)流(liu)。這樣，我(wo)(wo)(wo)們(men)(men)說(shuo)(shuo)：IGBT也可(ke)以進行(xing)整(zheng)(zheng)流(liu)，也沒有錯。但(dan)它的(de)(de)(de)(de)(de)(de)(de)實質，還是(shi)(shi)用(yong)的(de)(de)(de)(de)(de)(de)(de)二(er)極(ji)(ji)管(guan)(guan)實現了整(zheng)(zheng)流(liu)。既然是(shi)(shi)用(yong)了“IGBT模塊”上的(de)(de)(de)(de)(de)(de)(de)“續流(liu)二(er)極(ji)(ji)管(guan)(guan)”整(zheng)(zheng)流(liu)，為什(shen)么不(bu)直接用(yong)“二(er)極(ji)(ji)管(guan)(guan)”呢(ni)？答案是(shi)(shi)：這一(yi)種設計是(shi)(shi)利用(yong)“IGBT”的(de)(de)(de)(de)(de)(de)(de)通斷來(lai)治理變(bian)(bian)頻器(qi)工作時產生(sheng)的(de)(de)(de)(de)(de)(de)(de)“諧波”，這個(ge)(ge)原理以后(hou)寫(xie)文再講。它具有體(ti)積小、效率高(gao)、壽命長等優點。在(zai)(zai)自動控制系(xi)統中(zhong)，可(ke)作為大(da)功(gong)率驅動器(qi)件(jian)(jian)，實現控制大(da)功(gong)率設備。廣東模塊零售價

本(ben)發(fa)(fa)(fa)明(ming)(ming)涉及電力(li)電子開(kai)關(guan)(guan)技(ji)(ji)術領域(yu)，尤(you)其(qi)涉及一(yi)(yi)(yi)種立式晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)模塊(kuai)。背景技(ji)(ji)術：電力(li)電子開(kai)關(guan)(guan)是(shi)指(zhi)利用(yong)電子電路(lu)(lu)以及電力(li)電子器(qi)(qi)(qi)件(jian)(jian)(jian)實(shi)現電路(lu)(lu)通(tong)斷(duan)的(de)(de)運(yun)行單元(yuan)(yuan),至少(shao)包括(kuo)一(yi)(yi)(yi)個(ge)可(ke)(ke)控(kong)(kong)的(de)(de)電子驅(qu)動器(qi)(qi)(qi)件(jian)(jian)(jian)，如晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)、晶(jing)(jing)(jing)(jing)體(ti)管(guan)(guan)、場效應管(guan)(guan)、可(ke)(ke)控(kong)(kong)硅、繼電器(qi)(qi)(qi)等。其(qi)中，現有(you)的(de)(de)晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)*能夠(gou)實(shi)現單路(lu)(lu)控(kong)(kong)制，不(bu)(bu)利于(yu)(yu)晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)所(suo)(suo)(suo)在電力(li)系(xi)統的(de)(de)投切控(kong)(kong)制。因此，針對(dui)上述(shu)(shu)(shu)(shu)(shu)問題(ti)，有(you)必(bi)要(yao)提出進一(yi)(yi)(yi)步的(de)(de)解(jie)決方案(an)。技(ji)(ji)術實(shi)現要(yao)素：本(ben)發(fa)(fa)(fa)明(ming)(ming)的(de)(de)目的(de)(de)在于(yu)(yu)提供一(yi)(yi)(yi)種立式晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)模塊(kuai)，以克服現有(you)技(ji)(ji)術中存(cun)在的(de)(de)不(bu)(bu)足。為實(shi)現上述(shu)(shu)(shu)(shu)(shu)發(fa)(fa)(fa)明(ming)(ming)目的(de)(de)，本(ben)發(fa)(fa)(fa)明(ming)(ming)提供一(yi)(yi)(yi)種立式晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)模塊(kuai)，其(qi)包括(kuo)：外殼(ke)(ke)、蓋(gai)板(ban)(ban)、銅底板(ban)(ban)、形成(cheng)于(yu)(yu)所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)(shu)蓋(gai)板(ban)(ban)上的(de)(de)接(jie)(jie)頭(tou)、第(di)二接(jie)(jie)頭(tou)和(he)第(di)三(san)接(jie)(jie)頭(tou)、封裝于(yu)(yu)所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)(shu)外殼(ke)(ke)內部的(de)(de)晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)單元(yuan)(yuan)和(he)第(di)二晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)單元(yuan)(yuan)；所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)(shu)晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)單元(yuan)(yuan)包括(kuo)：壓(ya)(ya)(ya)塊(kuai)、門(men)極(ji)(ji)壓(ya)(ya)(ya)接(jie)(jie)式組(zu)件(jian)(jian)(jian)、導(dao)(dao)電片(pian)(pian)、第(di)二導(dao)(dao)電片(pian)(pian)、瓷板(ban)(ban)，所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)(shu)壓(ya)(ya)(ya)塊(kuai)設(she)置(zhi)于(yu)(yu)所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)(shu)門(men)極(ji)(ji)壓(ya)(ya)(ya)接(jie)(jie)式組(zu)件(jian)(jian)(jian)上，并通(tong)過所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)(shu)門(men)極(ji)(ji)壓(ya)(ya)(ya)接(jie)(jie)式組(zu)件(jian)(jian)(jian)對(dui)所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)(shu)導(dao)(dao)電片(pian)(pian)、第(di)二導(dao)(dao)電片(pian)(pian)、瓷板(ban)(ban)施加壓(ya)(ya)(ya)合(he)作用(yong)力(li)，所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)(shu)導(dao)(dao)電片(pian)(pian)、第(di)二導(dao)(dao)電片(pian)(pian)、瓷板(ban)(ban)依次設(she)置(zhi)于(yu)(yu)所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)(shu)銅底板(ban)(ban)上；所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)(shu)第(di)二晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)單元(yuan)(yuan)包括(kuo)：第(di)二壓(ya)(ya)(ya)塊(kuai)、第(di)二門(men)極(ji)(ji)壓(ya)(ya)(ya)接(jie)(jie)式組(zu)件(jian)(jian)(jian)、第(di)三(san)導(dao)(dao)電片(pian)(pian)、鉬(mu)片(pian)(pian)、銀片(pian)(pian)、鋁片(pian)(pian)，所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)(shu)第(di)二壓(ya)(ya)(ya)塊(kuai)設(she)置(zhi)于(yu)(yu)所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)(shu)第(di)二門(men)極(ji)(ji)壓(ya)(ya)(ya)接(jie)(jie)式組(zu)件(jian)(jian)(jian)上。廣東模塊(kuai)零售價可(ke)(ke)控(kong)(kong)硅(Silicon Controlled Rectifier) 簡稱SCR，是(shi)一(yi)(yi)(yi)種大功率電器(qi)(qi)(qi)元(yuan)(yuan)件(jian)(jian)(jian)，也稱晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)。

并通(tong)過(guo)所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)第(di)二門極壓(ya)(ya)接式(shi)組(zu)件對所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)第(di)三導(dao)(dao)(dao)電(dian)片(pian)(pian)(pian)(pian)、鉬(mu)片(pian)(pian)(pian)(pian)、銀片(pian)(pian)(pian)(pian)、鋁片(pian)(pian)(pian)(pian)施(shi)加壓(ya)(ya)合作(zuo)(zuo)用力(li)，所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)第(di)三導(dao)(dao)(dao)電(dian)片(pian)(pian)(pian)(pian)、鉬(mu)片(pian)(pian)(pian)(pian)、銀片(pian)(pian)(pian)(pian)、鋁片(pian)(pian)(pian)(pian)依次設置于(yu)所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)銅底板(ban)(ban)上(shang)。作(zuo)(zuo)為(wei)(wei)(wei)(wei)本(ben)發(fa)(fa)明(ming)(ming)(ming)(ming)的(de)(de)(de)(de)(de)(de)(de)(de)(de)立(li)(li)式(shi)晶閘(zha)(zha)管(guan)(guan)(guan)模(mo)(mo)塊的(de)(de)(de)(de)(de)(de)(de)(de)(de)改(gai)進(jin)(jin)(jin)，任一所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)接頭包括：螺(luo)栓和螺(luo)母，所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)螺(luo)栓與螺(luo)母之間還設置有(you)(you)彈簧(huang)墊(dian)圈(quan)和平墊(dian)圈(quan)。作(zuo)(zuo)為(wei)(wei)(wei)(wei)本(ben)發(fa)(fa)明(ming)(ming)(ming)(ming)的(de)(de)(de)(de)(de)(de)(de)(de)(de)立(li)(li)式(shi)晶閘(zha)(zha)管(guan)(guan)(guan)模(mo)(mo)塊的(de)(de)(de)(de)(de)(de)(de)(de)(de)改(gai)進(jin)(jin)(jin)，所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)銅底板(ban)(ban)通(tong)過(guo)硅(gui)凝(ning)膠對位(wei)于(yu)其上(shang)的(de)(de)(de)(de)(de)(de)(de)(de)(de)導(dao)(dao)(dao)電(dian)片(pian)(pian)(pian)(pian)、第(di)二導(dao)(dao)(dao)電(dian)片(pian)(pian)(pian)(pian)、瓷板(ban)(ban)進(jin)(jin)(jin)行(xing)固定。作(zuo)(zuo)為(wei)(wei)(wei)(wei)本(ben)發(fa)(fa)明(ming)(ming)(ming)(ming)的(de)(de)(de)(de)(de)(de)(de)(de)(de)立(li)(li)式(shi)晶閘(zha)(zha)管(guan)(guan)(guan)模(mo)(mo)塊的(de)(de)(de)(de)(de)(de)(de)(de)(de)改(gai)進(jin)(jin)(jin)，所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)銅底板(ban)(ban)通(tong)過(guo)硅(gui)凝(ning)膠對位(wei)于(yu)其上(shang)的(de)(de)(de)(de)(de)(de)(de)(de)(de)第(di)三導(dao)(dao)(dao)電(dian)片(pian)(pian)(pian)(pian)、鉬(mu)片(pian)(pian)(pian)(pian)、銀片(pian)(pian)(pian)(pian)、鋁片(pian)(pian)(pian)(pian)進(jin)(jin)(jin)行(xing)固定。作(zuo)(zuo)為(wei)(wei)(wei)(wei)本(ben)發(fa)(fa)明(ming)(ming)(ming)(ming)的(de)(de)(de)(de)(de)(de)(de)(de)(de)立(li)(li)式(shi)晶閘(zha)(zha)管(guan)(guan)(guan)模(mo)(mo)塊的(de)(de)(de)(de)(de)(de)(de)(de)(de)改(gai)進(jin)(jin)(jin)，所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)壓(ya)(ya)塊和第(di)二壓(ya)(ya)塊上(shang)還設置有(you)(you)絕(jue)緣套管(guan)(guan)(guan)。作(zuo)(zuo)為(wei)(wei)(wei)(wei)本(ben)發(fa)(fa)明(ming)(ming)(ming)(ming)的(de)(de)(de)(de)(de)(de)(de)(de)(de)立(li)(li)式(shi)晶閘(zha)(zha)管(guan)(guan)(guan)模(mo)(mo)塊的(de)(de)(de)(de)(de)(de)(de)(de)(de)改(gai)進(jin)(jin)(jin)，所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)絕(jue)緣套管(guan)(guan)(guan)與對應(ying)的(de)(de)(de)(de)(de)(de)(de)(de)(de)壓(ya)(ya)塊之間還設置有(you)(you)墊(dian)圈(quan)。作(zuo)(zuo)為(wei)(wei)(wei)(wei)本(ben)發(fa)(fa)明(ming)(ming)(ming)(ming)的(de)(de)(de)(de)(de)(de)(de)(de)(de)立(li)(li)式(shi)晶閘(zha)(zha)管(guan)(guan)(guan)模(mo)(mo)塊的(de)(de)(de)(de)(de)(de)(de)(de)(de)改(gai)進(jin)(jin)(jin)，所(suo)(suo)(suo)述(shu)(shu)(shu)(shu)外殼上(shang)還設置有(you)(you)門極銅排安裝座。與現(xian)有(you)(you)技(ji)術相比，本(ben)發(fa)(fa)明(ming)(ming)(ming)(ming)的(de)(de)(de)(de)(de)(de)(de)(de)(de)有(you)(you)益效(xiao)果是：本(ben)發(fa)(fa)明(ming)(ming)(ming)(ming)的(de)(de)(de)(de)(de)(de)(de)(de)(de)立(li)(li)式(shi)晶閘(zha)(zha)管(guan)(guan)(guan)模(mo)(mo)塊通(tong)過(guo)設置接頭、第(di)二接頭和第(di)三接頭、封裝于(yu)外殼內部(bu)的(de)(de)(de)(de)(de)(de)(de)(de)(de)晶閘(zha)(zha)管(guan)(guan)(guan)單元和第(di)二晶閘(zha)(zha)管(guan)(guan)(guan)單元能夠實(shi)現(xian)電(dian)力(li)系統的(de)(de)(de)(de)(de)(de)(de)(de)(de)多(duo)路控制，有(you)(you)效(xiao)保證(zheng)了(le)電(dian)力(li)系統的(de)(de)(de)(de)(de)(de)(de)(de)(de)正常(chang)運(yun)行(xing)。附圖說明(ming)(ming)(ming)(ming)為(wei)(wei)(wei)(wei)了(le)更(geng)清(qing)楚地(di)說明(ming)(ming)(ming)(ming)本(ben)發(fa)(fa)明(ming)(ming)(ming)(ming)實(shi)施(shi)例或現(xian)有(you)(you)技(ji)術中的(de)(de)(de)(de)(de)(de)(de)(de)(de)技(ji)術方(fang)案，下面(mian)將對實(shi)施(shi)例或現(xian)有(you)(you)技(ji)術描述(shu)(shu)(shu)(shu)中所(suo)(suo)(suo)需(xu)要使(shi)用的(de)(de)(de)(de)(de)(de)(de)(de)(de)附圖作(zuo)(zuo)簡單地(di)介紹，顯而易見(jian)地(di)。

流(liu)(liu)(liu)過(guo)(guo)IGBT的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)值(zhi)超過(guo)(guo)短(duan)(duan)路(lu)(lu)動(dong)(dong)(dong)作(zuo)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)，則立刻發生短(duan)(duan)路(lu)(lu)保(bao)(bao)(bao)護(hu)(hu)(hu)，門極(ji)驅(qu)(qu)(qu)動(dong)(dong)(dong)電(dian)(dian)(dian)(dian)路(lu)(lu)，輸出故(gu)(gu)(gu)障(zhang)(zhang)信號。跟過(guo)(guo)流(liu)(liu)(liu)保(bao)(bao)(bao)護(hu)(hu)(hu)一(yi)樣，為避免發生過(guo)(guo)大(da)的(de)(de)(de)(de)(de)di/dt，大(da)多數IPM采用(yong)兩級關斷(duan)模式(shi)。為縮短(duan)(duan)過(guo)(guo)流(liu)(liu)(liu)保(bao)(bao)(bao)護(hu)(hu)(hu)的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)檢(jian)測和故(gu)(gu)(gu)障(zhang)(zhang)動(dong)(dong)(dong)作(zuo)間(jian)(jian)的(de)(de)(de)(de)(de)響應(ying)(ying)時(shi)(shi)(shi)間(jian)(jian)，IPM內(nei)(nei)部(bu)使(shi)用(yong)實時(shi)(shi)(shi)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)控(kong)制(zhi)電(dian)(dian)(dian)(dian)路(lu)(lu)(RTC)，使(shi)響應(ying)(ying)時(shi)(shi)(shi)間(jian)(jian)小于100ns，從而有(you)效(xiao)抑制(zhi)了電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)和功率峰值(zhi)，提高了保(bao)(bao)(bao)護(hu)(hu)(hu)效(xiao)果(guo)(guo)。當IPM發生UV、OC、OT、SC中(zhong)任一(yi)故(gu)(gu)(gu)障(zhang)(zhang)時(shi)(shi)(shi)，其(qi)故(gu)(gu)(gu)障(zhang)(zhang)輸出信號持續(xu)時(shi)(shi)(shi)間(jian)(jian)tFO為1．8ms(SC持續(xu)時(shi)(shi)(shi)間(jian)(jian)會長一(yi)些)，此時(shi)(shi)(shi)間(jian)(jian)內(nei)(nei)IPM會門極(ji)驅(qu)(qu)(qu)動(dong)(dong)(dong)，關斷(duan)IPM;故(gu)(gu)(gu)障(zhang)(zhang)輸出信號持續(xu)時(shi)(shi)(shi)間(jian)(jian)結束(shu)后(hou)，IPM內(nei)(nei)部(bu)自(zi)動(dong)(dong)(dong)復(fu)位，門極(ji)驅(qu)(qu)(qu)動(dong)(dong)(dong)通道(dao)開放(fang)。可(ke)以看出，器件自(zi)身產生的(de)(de)(de)(de)(de)故(gu)(gu)(gu)障(zhang)(zhang)信號是非保(bao)(bao)(bao)持性(xing)(xing)的(de)(de)(de)(de)(de)，如果(guo)(guo)tFO結束(shu)后(hou)故(gu)(gu)(gu)障(zhang)(zhang)源仍舊沒有(you)排除，IPM就會重復(fu)自(zi)動(dong)(dong)(dong)保(bao)(bao)(bao)護(hu)(hu)(hu)的(de)(de)(de)(de)(de)過(guo)(guo)程，反(fan)復(fu)動(dong)(dong)(dong)作(zuo)。過(guo)(guo)流(liu)(liu)(liu)、短(duan)(duan)路(lu)(lu)、過(guo)(guo)熱保(bao)(bao)(bao)護(hu)(hu)(hu)動(dong)(dong)(dong)作(zuo)都是非常惡劣的(de)(de)(de)(de)(de)運(yun)行狀況，應(ying)(ying)避免其(qi)反(fan)復(fu)動(dong)(dong)(dong)作(zuo)，因此*靠IPM內(nei)(nei)部(bu)保(bao)(bao)(bao)護(hu)(hu)(hu)電(dian)(dian)(dian)(dian)路(lu)(lu)還不能(neng)完全實現器件的(de)(de)(de)(de)(de)自(zi)我(wo)保(bao)(bao)(bao)護(hu)(hu)(hu)。要使(shi)系統真正安全、可(ke)靠運(yun)行，需(xu)要輔(fu)助的(de)(de)(de)(de)(de)**保(bao)(bao)(bao)護(hu)(hu)(hu)電(dian)(dian)(dian)(dian)路(lu)(lu)。智能(neng)功率模塊(kuai)電(dian)(dian)(dian)(dian)路(lu)(lu)設(she)計(ji)(ji)編(bian)輯驅(qu)(qu)(qu)動(dong)(dong)(dong)電(dian)(dian)(dian)(dian)路(lu)(lu)是IPM主電(dian)(dian)(dian)(dian)路(lu)(lu)和控(kong)制(zhi)電(dian)(dian)(dian)(dian)路(lu)(lu)之間(jian)(jian)的(de)(de)(de)(de)(de)接口，良好的(de)(de)(de)(de)(de)驅(qu)(qu)(qu)動(dong)(dong)(dong)電(dian)(dian)(dian)(dian)路(lu)(lu)設(she)計(ji)(ji)對(dui)裝(zhuang)置的(de)(de)(de)(de)(de)運(yun)行效(xiao)率、可(ke)靠性(xing)(xing)和安全性(xing)(xing)都有(you)重要意(yi)義。IGBT的(de)(de)(de)(de)(de)分(fen)立驅(qu)(qu)(qu)動(dong)(dong)(dong)電(dian)(dian)(dian)(dian)路(lu)(lu)的(de)(de)(de)(de)(de)設(she)計(ji)(ji)IGBT的(de)(de)(de)(de)(de)驅(qu)(qu)(qu)動(dong)(dong)(dong)設(she)計(ji)(ji)問題(ti)亦即MOSFET的(de)(de)(de)(de)(de)驅(qu)(qu)(qu)動(dong)(dong)(dong)設(she)計(ji)(ji)問題(ti)。使(shi)用(yong)中(zhong)當IGBT模塊(kuai)集電(dian)(dian)(dian)(dian)極(ji)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)增大(da)時(shi)(shi)(shi)，所產生的(de)(de)(de)(de)(de)額(e)定損(sun)耗亦變大(da)。

直流(liu)(liu)(liu)儀表一(yi)般顯示平(ping)均值(zhi)(zhi)，交流(liu)(liu)(liu)儀表顯示非正弦電(dian)(dian)(dian)流(liu)(liu)(liu)時比實際(ji)值(zhi)(zhi)小(xiao)），但是輸(shu)出(chu)電(dian)(dian)(dian)流(liu)(liu)(liu)的(de)(de)(de)(de)有效值(zhi)(zhi)很大(da)(da)(da)，半導體器(qi)件(jian)的(de)(de)(de)(de)發(fa)熱(re)與(yu)有效值(zhi)(zhi)的(de)(de)(de)(de)平(ping)方成(cheng)正比，會使(shi)模(mo)(mo)(mo)(mo)塊(kuai)嚴重發(fa)熱(re)甚至燒毀。因此(ci)，模(mo)(mo)(mo)(mo)塊(kuai)應選擇在(zai)**大(da)(da)(da)導通角(jiao)的(de)(de)(de)(de)65％以(yi)(yi)上(shang)工作，及(ji)控(kong)制電(dian)(dian)(dian)壓應在(zai)5V以(yi)(yi)上(shang)。7、模(mo)(mo)(mo)(mo)塊(kuai)規(gui)格(ge)(ge)的(de)(de)(de)(de)選取(qu)方法考(kao)慮(lv)到晶閘(zha)管產品(pin)一(yi)般都是非正弦電(dian)(dian)(dian)流(liu)(liu)(liu)，存在(zai)導通角(jiao)的(de)(de)(de)(de)問題并且負(fu)(fu)載(zai)電(dian)(dian)(dian)流(liu)(liu)(liu)有一(yi)定(ding)的(de)(de)(de)(de)波(bo)動性(xing)(xing)和不(bu)穩定(ding)因素，且晶閘(zha)管芯片抗(kang)電(dian)(dian)(dian)流(liu)(liu)(liu)沖擊能(neng)力較差，在(zai)選取(qu)模(mo)(mo)(mo)(mo)塊(kuai)電(dian)(dian)(dian)流(liu)(liu)(liu)規(gui)格(ge)(ge)時必須(xu)(xu)留出(chu)一(yi)定(ding)余(yu)量。推(tui)薦(jian)選擇方法可按照以(yi)(yi)下公式(shi)計算：I>K×I負(fu)(fu)載(zai)×U**大(da)(da)(da)?MU實際(ji)K：安全(quan)系數，阻性(xing)(xing)負(fu)(fu)載(zai)K=，感性(xing)(xing)負(fu)(fu)載(zai)K=2；I負(fu)(fu)載(zai)：負(fu)(fu)載(zai)流(liu)(liu)(liu)過(guo)(guo)的(de)(de)(de)(de)**大(da)(da)(da)電(dian)(dian)(dian)流(liu)(liu)(liu)；U實際(ji)：負(fu)(fu)載(zai)上(shang)的(de)(de)(de)(de)**小(xiao)電(dian)(dian)(dian)壓；U**大(da)(da)(da)：模(mo)(mo)(mo)(mo)塊(kuai)能(neng)輸(shu)出(chu)的(de)(de)(de)(de)**大(da)(da)(da)電(dian)(dian)(dian)壓；（三相(xiang)整流(liu)(liu)(liu)模(mo)(mo)(mo)(mo)塊(kuai)為(wei)輸(shu)入(ru)電(dian)(dian)(dian)壓的(de)(de)(de)(de)，單相(xiang)整流(liu)(liu)(liu)模(mo)(mo)(mo)(mo)塊(kuai)為(wei)輸(shu)入(ru)電(dian)(dian)(dian)壓的(de)(de)(de)(de)，其余(yu)規(gui)格(ge)(ge)均為(wei)）；I：需要選擇模(mo)(mo)(mo)(mo)塊(kuai)的(de)(de)(de)(de)**小(xiao)電(dian)(dian)(dian)流(liu)(liu)(liu),模(mo)(mo)(mo)(mo)塊(kuai)標稱的(de)(de)(de)(de)電(dian)(dian)(dian)流(liu)(liu)(liu)必須(xu)(xu)大(da)(da)(da)于該(gai)值(zhi)(zhi)。模(mo)(mo)(mo)(mo)塊(kuai)散(san)(san)熱(re)條(tiao)(tiao)件(jian)的(de)(de)(de)(de)好(hao)壞直接(jie)關系到產品(pin)的(de)(de)(de)(de)使(shi)用(yong)(yong)壽命和短時過(guo)(guo)載(zai)能(neng)力，溫度越(yue)低模(mo)(mo)(mo)(mo)塊(kuai)的(de)(de)(de)(de)輸(shu)出(chu)電(dian)(dian)(dian)流(liu)(liu)(liu)越(yue)大(da)(da)(da)，所(suo)以(yi)(yi)在(zai)使(shi)用(yong)(yong)中(zhong)必須(xu)(xu)配(pei)備散(san)(san)熱(re)器(qi)和風機，建(jian)議采(cai)用(yong)(yong)帶有過(guo)(guo)熱(re)保護功能(neng)的(de)(de)(de)(de)產品(pin)，有水冷(leng)散(san)(san)熱(re)條(tiao)(tiao)件(jian)的(de)(de)(de)(de)優先(xian)選擇水冷(leng)散(san)(san)熱(re)。我們經過(guo)(guo)嚴格(ge)(ge)測算，確(que)定(ding)了(le)不(bu)同型號(hao)的(de)(de)(de)(de)產品(pin)所(suo)應該(gai)配(pei)備的(de)(de)(de)(de)散(san)(san)熱(re)器(qi)型號(hao)，推(tui)薦(jian)采(cai)用(yong)(yong)廠家(jia)配(pei)套(tao)的(de)(de)(de)(de)散(san)(san)熱(re)器(qi)和風機。IGBT模(mo)(mo)(mo)(mo)塊(kuai)的(de)(de)(de)(de)電(dian)(dian)(dian)壓規(gui)格(ge)(ge)與(yu)所(suo)使(shi)用(yong)(yong)裝置的(de)(de)(de)(de)輸(shu)入(ru)電(dian)(dian)(dian)源即試電(dian)(dian)(dian)電(dian)(dian)(dian)源電(dian)(dian)(dian)壓緊密相(xiang)關。廣東模(mo)(mo)(mo)(mo)塊(kuai)零(ling)售價

已有(you)適用(yong)于高壓變頻(pin)器的(de)有(you)電(dian)壓型HV-IGBT,igct,電(dian)流(liu)型sgct等。廣(guang)東模塊零售(shou)價(jia)

下(xia)面(mian)描述中(zhong)(zhong)的(de)(de)(de)(de)附(fu)圖(tu)**是(shi)本發明中(zhong)(zhong)記載的(de)(de)(de)(de)一(yi)些實(shi)施(shi)例，對(dui)于(yu)(yu)本領域普通技術(shu)人員來講，在(zai)不付出創造性勞動的(de)(de)(de)(de)前提下(xia)，還可(ke)以根據(ju)這些附(fu)圖(tu)獲得(de)其他的(de)(de)(de)(de)附(fu)圖(tu)。圖(tu)1為本發明的(de)(de)(de)(de)立式(shi)晶閘管模塊(kuai)的(de)(de)(de)(de)一(yi)具(ju)體實(shi)施(shi)方(fang)式(shi)的(de)(de)(de)(de)平面(mian)示意圖(tu)。具(ju)體實(shi)施(shi)方(fang)式(shi)下(xia)面(mian)結(jie)合(he)附(fu)圖(tu)所示的(de)(de)(de)(de)各實(shi)施(shi)方(fang)式(shi)對(dui)本發明進行詳細說明，但應當說明的(de)(de)(de)(de)是(shi)，這些實(shi)施(shi)方(fang)式(shi)并非對(dui)本發明的(de)(de)(de)(de)限(xian)制(zhi)，本領域普通技術(shu)人員根據(ju)這些實(shi)施(shi)方(fang)式(shi)所作的(de)(de)(de)(de)功能(neng)、方(fang)法、或者結(jie)構上(shang)的(de)(de)(de)(de)等效變換或替代，均屬于(yu)(yu)本發明的(de)(de)(de)(de)保護范圍之內。如圖(tu)1所示，本發明的(de)(de)(de)(de)立式(shi)晶閘管模塊(kuai)包括：外(wai)(wai)殼(ke)1、蓋板(ban)2、銅底板(ban)3、形成于(yu)(yu)所述蓋板(ban)2上(shang)的(de)(de)(de)(de)接頭(tou)4、第(di)(di)二接頭(tou)5和(he)第(di)(di)三接頭(tou)6、封裝于(yu)(yu)所述外(wai)(wai)殼(ke)1內部的(de)(de)(de)(de)晶閘管單(dan)(dan)元和(he)第(di)(di)二晶閘管單(dan)(dan)元。其中(zhong)(zhong)，任一(yi)所述接頭(tou)均可(ke)與電(dian)(dian)(dian)(dian)力系統中(zhong)(zhong)一(yi)路電(dian)(dian)(dian)(dian)路相連接，并在(zai)晶閘管單(dan)(dan)元的(de)(de)(de)(de)控制(zhi)下(xia)對(dui)所在(zai)電(dian)(dian)(dian)(dian)路進行投切控制(zhi)。所述晶閘管單(dan)(dan)元包括：壓(ya)塊(kuai)7、門極壓(ya)接式(shi)組(zu)件8、導(dao)(dao)(dao)電(dian)(dian)(dian)(dian)片(pian)9、第(di)(di)二導(dao)(dao)(dao)電(dian)(dian)(dian)(dian)片(pian)10、瓷板(ban)11。其中(zhong)(zhong)，所述壓(ya)塊(kuai)7設置于(yu)(yu)所述門極壓(ya)接式(shi)組(zu)件8上(shang)，并通過所述門極壓(ya)接式(shi)組(zu)件8對(dui)所述導(dao)(dao)(dao)電(dian)(dian)(dian)(dian)片(pian)9、第(di)(di)二導(dao)(dao)(dao)電(dian)(dian)(dian)(dian)片(pian)10、瓷板(ban)11施(shi)加(jia)壓(ya)合(he)作用力，所述導(dao)(dao)(dao)電(dian)(dian)(dian)(dian)片(pian)9、第(di)(di)二導(dao)(dao)(dao)電(dian)(dian)(dian)(dian)片(pian)10、瓷板(ban)11依次(ci)設置于(yu)(yu)所述銅底板(ban)3上(shang)。廣東(dong)模塊(kuai)零(ling)售價

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