HJT電(dian)(dian)池(chi)轉(zhuan)換(huan)效(xiao)率高，拓展(zhan)潛力大，工(gong)藝(yi)(yi)簡單并且(qie)降(jiang)本路線(xian)清(qing)晰，契合了(le)光伏產(chan)業發(fa)展(zhan)的(de)規律，是有潛力的(de)下(xia)一代電(dian)(dian)池(chi)技術。 HJT裝(zhuang)備與材料：包含制絨清(qing)洗設(she)備、PECVD設(she)備、PVD設(she)備、金屬化(hua)設(she)備等(deng)。 電(dian)(dian)鍍(du)銅(tong)設(she)備：采用金屬銅(tong)完全代替銀(yin)漿作為柵線(xian)電(dian)(dian)極，具備低成本、高效(xiao)率等(deng)優(you)勢。 異質結電(dian)(dian)池(chi)整(zheng)線(xian)解決(jue)(jue)方(fang)案(an)：釜川自主研發(fa)的(de)“零界”高效(xiao)異質結電(dian)(dian)池(chi)整(zheng)線(xian)制造解決(jue)(jue)方(fang)案(an)已(yi)實現設(she)備國產(chan)化(hua),該(gai)解決(jue)(jue)方(fang)案(an)疊加(jia)了(le)雙面(mian)微(wei)晶、無銀(yin)或低銀(yin)金屬化(hua)工(gong)藝(yi)(yi)，提升了(le)太(tai)陽能(neng)電(dian)(dian)池(chi)的(de)轉(zhuan)換(huan)效(xiao)率、良率和產(chan)能(neng)，并降(jiang)低了(le)生(sheng)產(chan)成本。HJT電(dian)(dian)池(chi)的(de)高效(xiao)性和長壽(shou)命使其成為太(tai)陽能(neng)發(fa)電(dian)(dian)的(de)重要選(xuan)擇(ze)。合肥光伏HJT報價

HJT光伏(fu)(fu)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)是(shi)一種高(gao)(gao)(gao)(gao)效(xiao)(xiao)率的(de)太陽能電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)，其效(xiao)(xiao)率可(ke)以(yi)(yi)達(da)到22%以(yi)(yi)上。要進一步提(ti)(ti)(ti)高(gao)(gao)(gao)(gao)HJT光伏(fu)(fu)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)的(de)效(xiao)(xiao)率，可(ke)以(yi)(yi)從以(yi)(yi)下(xia)幾個(ge)方面(mian)入手(shou)：1.提(ti)(ti)(ti)高(gao)(gao)(gao)(gao)光吸(xi)收效(xiao)(xiao)率：通(tong)(tong)過(guo)優(you)(you)(you)化(hua)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)結構和(he)材料，增(zeng)加光吸(xi)收的(de)范圍和(he)效(xiao)(xiao)率，提(ti)(ti)(ti)高(gao)(gao)(gao)(gao)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)的(de)光電(dian)(dian)(dian)(dian)轉(zhuan)換效(xiao)(xiao)率。2.降(jiang)低電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)內部損耗(hao)：通(tong)(tong)過(guo)優(you)(you)(you)化(hua)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)的(de)電(dian)(dian)(dian)(dian)子(zi)傳輸通(tong)(tong)道和(he)減少(shao)電(dian)(dian)(dian)(dian)子(zi)復合，降(jiang)低電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)內部損耗(hao)，提(ti)(ti)(ti)高(gao)(gao)(gao)(gao)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)的(de)輸出(chu)功率。3.提(ti)(ti)(ti)高(gao)(gao)(gao)(gao)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)的(de)穩定性(xing)：通(tong)(tong)過(guo)優(you)(you)(you)化(hua)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)的(de)材料和(he)結構，提(ti)(ti)(ti)高(gao)(gao)(gao)(gao)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)的(de)穩定性(xing)和(he)耐(nai)久(jiu)性(xing)，延(yan)長電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)的(de)使(shi)用壽命。4.提(ti)(ti)(ti)高(gao)(gao)(gao)(gao)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)的(de)溫度特(te)性(xing)：通(tong)(tong)過(guo)優(you)(you)(you)化(hua)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)的(de)材料和(he)結構，提(ti)(ti)(ti)高(gao)(gao)(gao)(gao)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)的(de)溫度特(te)性(xing)，使(shi)其在高(gao)(gao)(gao)(gao)溫環境下(xia)仍能保持高(gao)(gao)(gao)(gao)效(xiao)(xiao)率。5.提(ti)(ti)(ti)高(gao)(gao)(gao)(gao)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)的(de)制造(zao)工藝：通(tong)(tong)過(guo)優(you)(you)(you)化(hua)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)的(de)制造(zao)工藝，提(ti)(ti)(ti)高(gao)(gao)(gao)(gao)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)的(de)一致性(xing)和(he)可(ke)重(zhong)復性(xing)，降(jiang)低成(cheng)本(ben)，提(ti)(ti)(ti)高(gao)(gao)(gao)(gao)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)的(de)市場競爭力。廣東(dong)光伏(fu)(fu)HJT設備廠(chang)家HJT電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)是(shi)高(gao)(gao)(gao)(gao)效(xiao)(xiao)晶體硅電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)的(de)一種，具有(you)高(gao)(gao)(gao)(gao)效(xiao)(xiao)率、低成(cheng)本(ben)、長壽命等優(you)(you)(you)勢。

HJT是(shi)HeterojunctionTechnology的(de)(de)(de)縮(suo)寫，是(shi)一種N型單晶(jing)(jing)雙面(mian)電(dian)(dian)池(chi)，具有(you)工藝簡單、發(fa)電(dian)(dian)量高、度電(dian)(dian)成(cheng)(cheng)本低的(de)(de)(de)優勢。異質(zhi)結太(tai)陽能電(dian)(dian)池(chi)使用晶(jing)(jing)體硅(gui)(gui)片進行(xing)載流(liu)子(zi)傳輸和(he)吸收(shou)，并使用非(fei)晶(jing)(jing)/或微晶(jing)(jing)薄硅(gui)(gui)層進行(xing)鈍化和(he)結的(de)(de)(de)形成(cheng)(cheng)。頂部(bu)電(dian)(dian)極由透明導電(dian)(dian)氧化物（TCO）層和(he)金(jin)屬網格組成(cheng)(cheng)。異質(zhi)結硅(gui)(gui)太(tai)陽能電(dian)(dian)池(chi)已(yi)經吸引(yin)了很(hen)多人的(de)(de)(de)注(zhu)意，因為它們(men)可以達到很(hen)高的(de)(de)(de)轉換效率，可達26.3%，由隆基團隊對HJT極限效率進行(xing)更新為28.5%，同時使用低溫度加工，通常(chang)整個(ge)過程低于200℃。低加工溫度允許處理厚度小于100微米(mi)的(de)(de)(de)硅(gui)(gui)晶(jing)(jing)圓，同時保持高產量。

HJT電(dian)(dian)池整線解決方(fang)(fang)案(an)，制(zhi)絨清洗的(de)(de)(de)(de)(de)(de)主要目的(de)(de)(de)(de)(de)(de)有(you)，1去除(chu)硅(gui)片表面(mian)(mian)(mian)(mian)的(de)(de)(de)(de)(de)(de)污染和(he)損傷(shang)層；2利用(yong)KOH腐(fu)(fu)蝕(shi)液對n型硅(gui)片進行各項異(yi)性(xing)(xing)腐(fu)(fu)蝕(shi)，將Si（100）晶(jing)面(mian)(mian)(mian)(mian)腐(fu)(fu)蝕(shi)為Si（111）晶(jing)面(mian)(mian)(mian)(mian)的(de)(de)(de)(de)(de)(de)四方(fang)(fang)椎體結(jie)構（“金字塔(ta)結(jie)構”），即在(zai)硅(gui)片表面(mian)(mian)(mian)(mian)形成絨面(mian)(mian)(mian)(mian)，可將硅(gui)片表面(mian)(mian)(mian)(mian)反(fan)射率降低至12.5%以下，從而(er)產生更多的(de)(de)(de)(de)(de)(de)光(guang)生載(zai)流子；3形成潔凈硅(gui)片表面(mian)(mian)(mian)(mian)，由于HJT電(dian)(dian)池中硅(gui)片襯(chen)底表面(mian)(mian)(mian)(mian)直接(jie)為異(yi)質(zhi)結(jie)界面(mian)(mian)(mian)(mian)的(de)(de)(de)(de)(de)(de)一部分，避免(mian)不(bu)潔凈引(yin)進的(de)(de)(de)(de)(de)(de)缺陷和(he)雜質(zhi)而(er)帶來(lai)的(de)(de)(de)(de)(de)(de)結(jie)界面(mian)(mian)(mian)(mian)處(chu)載(zai)流子的(de)(de)(de)(de)(de)(de)復(fu)合。堿溶液濃度(du)較(jiao)低時，單晶(jing)硅(gui)的(de)(de)(de)(de)(de)(de)(100)與(yu)(111)晶(jing)面(mian)(mian)(mian)(mian)的(de)(de)(de)(de)(de)(de)腐(fu)(fu)蝕(shi)速度(du)差別(bie)比(bi)較(jiao)明顯(xian)，速度(du)的(de)(de)(de)(de)(de)(de)比(bi)值被稱為各向異(yi)性(xing)(xing)因子(anisotropicfactorAF)；因此改(gai)變(bian)堿溶液的(de)(de)(de)(de)(de)(de)濃度(du)及溫度(du)，可以有(you)效地改(gai)變(bian)AF，使得在(zai)不(bu)同方(fang)(fang)向上的(de)(de)(de)(de)(de)(de)速度(du)不(bu)同，在(zai)硅(gui)片表面(mian)(mian)(mian)(mian)形成密集(ji)分布的(de)(de)(de)(de)(de)(de)“金字塔(ta)”結(jie)構的(de)(de)(de)(de)(de)(de)減反(fan)射絨面(mian)(mian)(mian)(mian)；在(zai)制(zhi)絨工序，絨面(mian)(mian)(mian)(mian)大小(xiao)為主要指標，一般可通過添加劑的(de)(de)(de)(de)(de)(de)選擇、工藝(yi)(yi)配比(bi)的(de)(de)(de)(de)(de)(de)變(bian)化、工藝(yi)(yi)溫度(du)及工藝(yi)(yi)時間等來(lai)進行調節(jie)控制(zhi)。HJT電(dian)(dian)池結(jie)合鈣鈦礦技(ji)術(shu)，HJT電(dian)(dian)池更展現出極(ji)大的(de)(de)(de)(de)(de)(de)潛(qian)力(li)，成為潛(qian)力(li)很大的(de)(de)(de)(de)(de)(de)太陽能(neng)電(dian)(dian)池技(ji)術(shu)。

高效HJT電池生產設備，制(zhi)絨(rong)(rong)清洗的(de)(de)(de)(de)主要(yao)目的(de)(de)(de)(de)有(you)，1去除硅片(pian)(pian)表(biao)面(mian)(mian)的(de)(de)(de)(de)污染和(he)(he)損(sun)傷(shang)層；2利用KOH腐(fu)蝕液對n型硅片(pian)(pian)進(jin)行各(ge)項異性腐(fu)蝕，將(jiang)Si（100）晶(jing)(jing)面(mian)(mian)腐(fu)蝕為Si（111）晶(jing)(jing)面(mian)(mian)的(de)(de)(de)(de)四方(fang)椎體結構（“金字塔結構”），即在硅片(pian)(pian)表(biao)面(mian)(mian)形成(cheng)絨(rong)(rong)面(mian)(mian)，可(ke)將(jiang)硅片(pian)(pian)表(biao)面(mian)(mian)反(fan)射率降低至12.5%以下，從而產生更多的(de)(de)(de)(de)光(guang)生載流(liu)子；3形成(cheng)潔凈(jing)硅片(pian)(pian)表(biao)面(mian)(mian)，由于(yu)HJT電池中硅片(pian)(pian)襯底表(biao)面(mian)(mian)直(zhi)接(jie)為異質(zhi)結界面(mian)(mian)的(de)(de)(de)(de)一部分，避免不(bu)潔凈(jing)引進(jin)的(de)(de)(de)(de)缺陷(xian)和(he)(he)雜(za)質(zhi)而帶(dai)來的(de)(de)(de)(de)結界面(mian)(mian)處載流(liu)子的(de)(de)(de)(de)復(fu)合。堿溶液濃度(du)較低時，單晶(jing)(jing)硅的(de)(de)(de)(de)(100)與(111)晶(jing)(jing)面(mian)(mian)的(de)(de)(de)(de)腐(fu)蝕速度(du)差別比(bi)較明(ming)顯，速度(du)的(de)(de)(de)(de)比(bi)值被稱(cheng)為各(ge)向異性因(yin)子(anisotropicfactorAF)；因(yin)此改變堿溶液的(de)(de)(de)(de)濃度(du)及溫度(du)，可(ke)以有(you)效地改變AF，使得在不(bu)同方(fang)向上的(de)(de)(de)(de)速度(du)不(bu)同，在硅片(pian)(pian)表(biao)面(mian)(mian)形成(cheng)密(mi)集(ji)分布的(de)(de)(de)(de)“金字塔”結構的(de)(de)(de)(de)減反(fan)射絨(rong)(rong)面(mian)(mian)；在制(zhi)絨(rong)(rong)工(gong)序，絨(rong)(rong)面(mian)(mian)大小為主要(yao)指標，一般可(ke)通過添(tian)加劑的(de)(de)(de)(de)選擇(ze)、工(gong)藝(yi)配比(bi)的(de)(de)(de)(de)變化(hua)、工(gong)藝(yi)溫度(du)及工(gong)藝(yi)時間等來進(jin)行調節控制(zhi)。釜(fu)川自主研發的(de)(de)(de)(de)“零界”高效HJT電池整線制(zhi)造解決方(fang)案已實(shi)現設備國產化(hua)。廣(guang)州光(guang)伏HJT濕法設備

HJT電池(chi)的(de)結構采(cai)用(yong)兩片(pian)薄晶硅片(pian)中間夾(jia)著一層N型半導體(ti)作為基底(di)，這種結構可以增加光的(de)吸收和利用(yong)率。合肥光伏HJT報價

HJT電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)是一種(zhong)高(gao)(gao)(gao)(gao)效的(de)(de)太陽能電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)，其(qi)發(fa)(fa)電(dian)(dian)(dian)(dian)(dian)量(liang)(liang)(liang)受到多種(zhong)因素的(de)(de)影(ying)(ying)響，包括以下幾個方面：1.光(guang)(guang)照(zhao)強(qiang)度(du)：HJT電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)發(fa)(fa)電(dian)(dian)(dian)(dian)(dian)量(liang)(liang)(liang)與光(guang)(guang)照(zhao)強(qiang)度(du)成正比，光(guang)(guang)照(zhao)強(qiang)度(du)越高(gao)(gao)(gao)(gao)，發(fa)(fa)電(dian)(dian)(dian)(dian)(dian)量(liang)(liang)(liang)越大(da)。2.溫(wen)度(du)：高(gao)(gao)(gao)(gao)溫(wen)會降低(di)HJT電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)效率，因為溫(wen)度(du)升高(gao)(gao)(gao)(gao)會增加電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)內(nei)部電(dian)(dian)(dian)(dian)(dian)阻，導致(zhi)電(dian)(dian)(dian)(dian)(dian)流(liu)流(liu)失，從(cong)而(er)降低(di)發(fa)(fa)電(dian)(dian)(dian)(dian)(dian)量(liang)(liang)(liang)。3.濕(shi)度(du)：濕(shi)度(du)過高(gao)(gao)(gao)(gao)會影(ying)(ying)響電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)輸出電(dian)(dian)(dian)(dian)(dian)壓和電(dian)(dian)(dian)(dian)(dian)流(liu)，從(cong)而(er)降低(di)發(fa)(fa)電(dian)(dian)(dian)(dian)(dian)量(liang)(liang)(liang)。4.陰影(ying)(ying)：陰影(ying)(ying)會影(ying)(ying)響電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)光(guang)(guang)照(zhao)強(qiang)度(du)，從(cong)而(er)降低(di)發(fa)(fa)電(dian)(dian)(dian)(dian)(dian)量(liang)(liang)(liang)。5.污(wu)染：電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)表面的(de)(de)污(wu)染物會影(ying)(ying)響光(guang)(guang)的(de)(de)透過率，從(cong)而(er)降低(di)發(fa)(fa)電(dian)(dian)(dian)(dian)(dian)量(liang)(liang)(liang)。6.電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)質(zhi)量(liang)(liang)(liang)：電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)質(zhi)量(liang)(liang)(liang)直接影(ying)(ying)響其(qi)發(fa)(fa)電(dian)(dian)(dian)(dian)(dian)效率，高(gao)(gao)(gao)(gao)質(zhi)量(liang)(liang)(liang)的(de)(de)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)可以提高(gao)(gao)(gao)(gao)發(fa)(fa)電(dian)(dian)(dian)(dian)(dian)量(liang)(liang)(liang)。總(zong)之，要想提高(gao)(gao)(gao)(gao)HJT電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)發(fa)(fa)電(dian)(dian)(dian)(dian)(dian)量(liang)(liang)(liang)，需要注意(yi)以上因素的(de)(de)影(ying)(ying)響，并采(cai)取相應的(de)(de)措施來優化(hua)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)工(gong)作環(huan)境和質(zhi)量(liang)(liang)(liang)。合肥(fei)光(guang)(guang)伏HJT報價

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