異(yi)質結(jie)電(dian)池HJT是HeterojunctionTechnology的(de)(de)縮(suo)寫，是一種N型單晶(jing)(jing)(jing)雙(shuang)面電(dian)池，具有(you)工藝(yi)簡單、發(fa)電(dian)量(liang)高、度(du)(du)電(dian)成(cheng)本低(di)的(de)(de)優(you)勢。異(yi)質結(jie)太(tai)陽能(neng)電(dian)池使(shi)用(yong)晶(jing)(jing)(jing)體硅(gui)片進(jin)行(xing)(xing)載流子傳輸和(he)吸(xi)(xi)收，并使(shi)用(yong)非晶(jing)(jing)(jing)/或(huo)微(wei)晶(jing)(jing)(jing)薄硅(gui)層(ceng)進(jin)行(xing)(xing)鈍化和(he)結(jie)的(de)(de)形成(cheng)。頂部電(dian)極由透明導電(dian)氧化物（TCO）層(ceng)和(he)金(jin)屬網格組成(cheng)。異(yi)質結(jie)硅(gui)太(tai)陽能(neng)電(dian)池已經(jing)吸(xi)(xi)引了(le)很多人的(de)(de)注意(yi)，因為(wei)它們(men)可以達到很高的(de)(de)轉換效率(lv)，可達26.3%，由隆基團(tuan)隊對HJT極限效率(lv)進(jin)行(xing)(xing)更新(xin)為(wei)28.5%，同(tong)時使(shi)用(yong)低(di)溫度(du)(du)加工，通(tong)常(chang)整個過程低(di)于200℃。低(di)加工溫度(du)(du)允(yun)許(xu)處理(li)厚度(du)(du)小于100微(wei)米(mi)的(de)(de)硅(gui)晶(jing)(jing)(jing)圓，同(tong)時保持(chi)高產量(liang)。光伏異(yi)質結(jie)在建筑(zhu)、農業(ye)、交通(tong)等領域(yu)的(de)(de)廣泛(fan)應(ying)用(yong)，為(wei)綠色(se)能(neng)源的(de)(de)發(fa)展提供了(le)有(you)力(li)支持(chi)。杭州單晶(jing)(jing)(jing)硅(gui)異(yi)質結(jie)設備(bei)廠家

異(yi)質(zhi)結(jie)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)技(ji)術路線，發(fa)(fa)(fa)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)量高(gao)(gao)：低(di)溫度(du)(du)(du)意(yi)味著在組件高(gao)(gao)溫運行環境中，HJT電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)具有相(xiang)對較(jiao)高(gao)(gao)的(de)(de)(de)發(fa)(fa)(fa)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)性能，從(cong)而實現(xian)發(fa)(fa)(fa)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)量增益、降低(di)系統的(de)(de)(de)度(du)(du)(du)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)成本；若考(kao)慮電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)工作溫度(du)(du)(du)超出環境溫度(du)(du)(du)10-40℃,而全年(nian)平(ping)均環境溫度(du)(du)(du)相(xiang)比實驗(yan)室標(biao)準工況低(di)5-10℃，HJT電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)每W發(fa)(fa)(fa)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)量高(gao)(gao)出雙(shuang)(shuang)面(mian)(mian)(mian)(mian)(mian)PERC電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)約(yue)(yue)0.6%-3.9%。優(you)勢五(wu)：雙(shuang)(shuang)面(mian)(mian)(mian)(mian)(mian)率(lv)高(gao)(gao)HJT正反(fan)面(mian)(mian)(mian)(mian)(mian)結(jie)構對稱，而且TCO薄(bo)膜是透光(guang)(guang)的(de)(de)(de)，天然(ran)就是雙(shuang)(shuang)面(mian)(mian)(mian)(mian)(mian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)；HJT的(de)(de)(de)雙(shuang)(shuang)面(mian)(mian)(mian)(mian)(mian)率(lv)能達到(dao)90%以(yi)上(shang)(能達到(dao)98%)，雙(shuang)(shuang)面(mian)(mian)(mian)(mian)(mian)PERC的(de)(de)(de)雙(shuang)(shuang)面(mian)(mian)(mian)(mian)(mian)率(lv)約(yue)(yue)為75%+；據solarzoom測算，考(kao)慮10%-20%的(de)(de)(de)背面(mian)(mian)(mian)(mian)(mian)輻照及電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)片雙(shuang)(shuang)面(mian)(mian)(mian)(mian)(mian)率(lv)的(de)(de)(de)差異(yi)，HJT電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)(dan)瓦發(fa)(fa)(fa)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)量高(gao)(gao)出雙(shuang)(shuang)面(mian)(mian)(mian)(mian)(mian)PERC電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)約(yue)(yue)2%-4%。優(you)勢六(liu)：弱光(guang)(guang)效應(ying)HJT電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)采用(yong)(yong)(yong)N型單(dan)(dan)晶硅片，而PERC電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)采用(yong)(yong)(yong)P型單(dan)(dan)晶硅片在600W/m以(yi)下的(de)(de)(de)輻照強度(du)(du)(du)；N型相(xiang)比P型的(de)(de)(de)發(fa)(fa)(fa)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)表現(xian)高(gao)(gao)出1%-2%左右(you)，HJT電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)因弱光(guang)(guang)效應(ying)而在每W發(fa)(fa)(fa)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)量上(shang)高(gao)(gao)出雙(shuang)(shuang)面(mian)(mian)(mian)(mian)(mian)PERC電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)約(yue)(yue)0.5-1.0%左右(you)。廣州高(gao)(gao)效異(yi)質(zhi)結(jie)裝備光(guang)(guang)伏異(yi)質(zhi)結(jie)技(ji)術的(de)(de)(de)廣泛應(ying)用(yong)(yong)(yong)能夠(gou)推動光(guang)(guang)伏產業(ye)的(de)(de)(de)創新發(fa)(fa)(fa)展，促進科(ke)技(ji)進步(bu)和經(jing)濟增長。

異(yi)(yi)質(zhi)結(jie)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)（HJT電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)）的(de)(de)特(te)點(dian)和優勢1、無(wu)PID現象由于(yu)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)上(shang)表(biao)(biao)面(mian)(mian)為(wei)(wei)TCO，電(dian)(dian)(dian)(dian)(dian)(dian)荷不會(hui)在電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)表(biao)(biao)面(mian)(mian)的(de)(de)TCO上(shang)產(chan)生極化(hua)現象，無(wu)PID現象。同時實測數據也證實了(le)這一點(dian)。異(yi)(yi)質(zhi)結(jie)太(tai)陽能(neng)(neng)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)的(de)(de)技術應(ying)用(yong)(yong)與(yu)(yu)前景(jing)2、低(di)溫(wen)制(zhi)(zhi)(zhi)造工(gong)藝(yi)HJT電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)所有制(zhi)(zhi)(zhi)程(cheng)的(de)(de)加工(gong)溫(wen)度均(jun)低(di)于(yu)250，避(bi)免了(le)生產(chan)效(xiao)(xiao)率(lv)低(di)而(er)成本高(gao)的(de)(de)高(gao)溫(wen)擴(kuo)散制(zhi)(zhi)(zhi)結(jie)的(de)(de)過(guo)程(cheng)，而(er)且低(di)溫(wen)工(gong)藝(yi)使得a-Si薄(bo)膜的(de)(de)光學(xue)帶(dai)隙、沉積速率(lv)、吸(xi)收(shou)系數以及氫含量得到(dao)較精(jing)確的(de)(de)控制(zhi)(zhi)(zhi)，也可避(bi)免因高(gao)溫(wen)導致的(de)(de)熱應(ying)力等不良影(ying)響(xiang)。3、高(gao)效(xiao)(xiao)率(lv)HJT電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)一直在刷新著量產(chan)的(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)轉換效(xiao)(xiao)率(lv)的(de)(de)世(shi)界紀錄。HJT電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)的(de)(de)效(xiao)(xiao)率(lv)比P型單(dan)晶(jing)硅(gui)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)高(gao)1-2%，而(er)且之間的(de)(de)差異(yi)(yi)在慢(man)慢(man)增大。4、高(gao)光照穩定性異(yi)(yi)質(zhi)結(jie)太(tai)陽能(neng)(neng)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)的(de)(de)技術應(ying)用(yong)(yong)與(yu)(yu)前景(jing)在HJT太(tai)陽能(neng)(neng)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)中不會(hui)出(chu)現非晶(jing)硅(gui)太(tai)陽能(neng)(neng)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)中常見的(de)(de)Staebler-Wronski效(xiao)(xiao)應(ying)。同時HJT電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)采用(yong)(yong)的(de)(de)N型硅(gui)片，摻雜劑為(wei)(wei)磷，幾乎無(wu)光致衰(shuai)減現象。5、可向(xiang)薄(bo)型化(hua)發展HJT電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)的(de)(de)制(zhi)(zhi)(zhi)程(cheng)溫(wen)度低(di)，上(shang)下表(biao)(biao)面(mian)(mian)結(jie)構對稱，無(wu)機械應(ying)力產(chan)生，可以順利實現薄(bo)型化(hua)；另外經研究，對于(yu)少(shao)子(zi)壽命較高(gao)（SRV<100cm/s）的(de)(de)N型硅(gui)基底，片子(zi)越薄(bo)可以得到(dao)越高(gao)的(de)(de)開路(lu)電(dian)(dian)(dian)(dian)(dian)(dian)壓。

光(guang)伏異(yi)(yi)質(zhi)(zhi)(zhi)結(jie)(jie)(jie)(jie)是(shi)太(tai)(tai)陽能(neng)電(dian)池(chi)的主要組成部分，其應用(yong)(yong)(yong)前(qian)景(jing)非(fei)常廣(guang)闊(kuo)(kuo)。隨著全(quan)球對(dui)清潔能(neng)源(yuan)的需求不斷增加(jia)，太(tai)(tai)陽能(neng)行業(ye)(ye)的發展(zhan)前(qian)景(jing)也越來越廣(guang)闊(kuo)(kuo)。光(guang)伏異(yi)(yi)質(zhi)(zhi)(zhi)結(jie)(jie)(jie)(jie)具有(you)高(gao)效(xiao)、環(huan)保、可(ke)(ke)再生等(deng)特點，可(ke)(ke)以(yi)廣(guang)泛應用(yong)(yong)(yong)于家(jia)(jia)庭、工業(ye)(ye)、農業(ye)(ye)等(deng)領(ling)(ling)(ling)域(yu)(yu)。在家(jia)(jia)庭領(ling)(ling)(ling)域(yu)(yu)，光(guang)伏異(yi)(yi)質(zhi)(zhi)(zhi)結(jie)(jie)(jie)(jie)可(ke)(ke)以(yi)用(yong)(yong)(yong)于太(tai)(tai)陽能(neng)發電(dian)系統，為(wei)家(jia)(jia)庭提(ti)供(gong)(gong)清潔、穩定(ding)的電(dian)力供(gong)(gong)應。在工業(ye)(ye)領(ling)(ling)(ling)域(yu)(yu)，光(guang)伏異(yi)(yi)質(zhi)(zhi)(zhi)結(jie)(jie)(jie)(jie)可(ke)(ke)以(yi)用(yong)(yong)(yong)于太(tai)(tai)陽能(neng)電(dian)站，為(wei)企業(ye)(ye)提(ti)供(gong)(gong)大規模(mo)的清潔能(neng)源(yuan)。在農業(ye)(ye)領(ling)(ling)(ling)域(yu)(yu)，光(guang)伏異(yi)(yi)質(zhi)(zhi)(zhi)結(jie)(jie)(jie)(jie)可(ke)(ke)以(yi)用(yong)(yong)(yong)于太(tai)(tai)陽能(neng)灌溉系統，為(wei)農民提(ti)供(gong)(gong)便捷、高(gao)效(xiao)的灌溉服務(wu)。此外，光(guang)伏異(yi)(yi)質(zhi)(zhi)(zhi)結(jie)(jie)(jie)(jie)還可(ke)(ke)以(yi)應用(yong)(yong)(yong)于交通、通信、航空等(deng)領(ling)(ling)(ling)域(yu)(yu)，為(wei)這些領(ling)(ling)(ling)域(yu)(yu)提(ti)供(gong)(gong)清潔、高(gao)效(xiao)的能(neng)源(yuan)供(gong)(gong)應。因此，光(guang)伏異(yi)(yi)質(zhi)(zhi)(zhi)結(jie)(jie)(jie)(jie)在太(tai)(tai)陽能(neng)行業(ye)(ye)的應用(yong)(yong)(yong)前(qian)景(jing)非(fei)常廣(guang)闊(kuo)(kuo)，具有(you)非(fei)常大的發展(zhan)潛(qian)力。零界高(gao)效(xiao)異(yi)(yi)質(zhi)(zhi)(zhi)結(jie)(jie)(jie)(jie)電(dian)池(chi)整線(xian)裝備，可(ke)(ke)實現更低的度電(dian)成本及更好的長期可(ke)(ke)靠性(xing)。

太(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)異質(zhi)結(jie)的(de)(de)(de)(de)制(zhi)造過程(cheng)是一(yi)(yi)個復雜的(de)(de)(de)(de)工藝過程(cheng)，需(xu)要(yao)(yao)多個步驟來完成(cheng)。首先，需(xu)要(yao)(yao)準(zhun)備好基板，通(tong)常(chang)使用的(de)(de)(de)(de)是硅基板。然(ran)后，在(zai)基板上(shang)(shang)涂(tu)(tu)覆(fu)(fu)一(yi)(yi)層氧化(hua)硅，這一(yi)(yi)步是為(wei)了(le)保(bao)(bao)護基板不受(shou)損傷。接著(zhu)，在(zai)氧化(hua)硅上(shang)(shang)涂(tu)(tu)覆(fu)(fu)一(yi)(yi)層摻雜劑，通(tong)常(chang)使用的(de)(de)(de)(de)是磷(lin)或硼，這一(yi)(yi)步是為(wei)了(le)形成(cheng)p型(xing)(xing)或n型(xing)(xing)半導體。然(ran)后，將摻雜劑加熱，使其擴散到基板中，形成(cheng)p-n結(jie)。接下(xia)來，需(xu)要(yao)(yao)在(zai)p-n結(jie)上(shang)(shang)涂(tu)(tu)覆(fu)(fu)一(yi)(yi)層透(tou)明(ming)導電(dian)膜，通(tong)常(chang)使用的(de)(de)(de)(de)是氧化(hua)鋅或氧化(hua)銦錫。除此(ci)之外(wai)，將太(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)電(dian)池(chi)片切割成(cheng)合(he)適(shi)的(de)(de)(de)(de)大小，然(ran)后進(jin)行(xing)測試和(he)(he)包裝。整個制(zhi)造過程(cheng)需(xu)要(yao)(yao)嚴格的(de)(de)(de)(de)控制(zhi)溫度(du)、時(shi)間和(he)(he)化(hua)學物質(zhi)的(de)(de)(de)(de)濃度(du)等因素，以確保(bao)(bao)太(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)電(dian)池(chi)的(de)(de)(de)(de)性能(neng)(neng)(neng)和(he)(he)穩(wen)定性。此(ci)外(wai)，制(zhi)造過程(cheng)中還需(xu)要(yao)(yao)進(jin)行(xing)多次質(zhi)量檢測和(he)(he)測試，以確保(bao)(bao)太(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)電(dian)池(chi)的(de)(de)(de)(de)質(zhi)量符合(he)標準(zhun)。太(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)異質(zhi)結(jie)的(de)(de)(de)(de)制(zhi)造過程(cheng)是一(yi)(yi)個高技(ji)(ji)術含量的(de)(de)(de)(de)工藝過程(cheng)，需(xu)要(yao)(yao)專業的(de)(de)(de)(de)技(ji)(ji)術人員和(he)(he)設備來完成(cheng)。光伏異質(zhi)結(jie)作為(wei)一(yi)(yi)種重要(yao)(yao)的(de)(de)(de)(de)可(ke)(ke)再生(sheng)能(neng)(neng)(neng)源(yuan)技(ji)(ji)術，將繼(ji)續(xu)為(wei)推(tui)動全球(qiu)能(neng)(neng)(neng)源(yuan)轉型(xing)(xing)和(he)(he)可(ke)(ke)持續(xu)發(fa)展做出積極貢(gong)獻。浙江(jiang)0bb異質(zhi)結(jie)吸雜設備

異(yi)(yi)質(zhi)結電池主工(gong)藝之一：制絨清洗(xi)設備。杭州單晶硅異(yi)(yi)質(zhi)結設備廠家

高(gao)效異(yi)(yi)(yi)質(zhi)結(jie)(jie)(jie)電(dian)池整(zheng)(zheng)線解(jie)決方案，TCO的(de)(de)(de)(de)作用(yong)：在(zai)形成a-Si:H/c-Si異(yi)(yi)(yi)質(zhi)結(jie)(jie)(jie)后，電(dian)池被(bei)用(yong)一個(ge)(ge)~80納(na)米(mi)的(de)(de)(de)(de)透明導(dao)電(dian)氧化物接觸。~80納(na)米(mi)薄的(de)(de)(de)(de)透明導(dao)電(dian)氧化物（TCO）層和前(qian)面(mian)的(de)(de)(de)(de)金(jin)屬網格。透明導(dao)電(dian)氧化物通常(chang)是摻有Sn的(de)(de)(de)(de)InO（ITO）或摻有Al的(de)(de)(de)(de)ZnO。通常(chang)，TCO也被(bei)用(yong)來在(zai)電(dian)池的(de)(de)(de)(de)背面(mian)形成一個(ge)(ge)介(jie)電(dian)鏡。因此(ci)，為了(le)理解(jie)和優(you)化整(zheng)(zheng)個(ge)(ge)a-Si:H/c-Si太(tai)陽能電(dian)池，還必(bi)須考(kao)慮(lv)TCO對(dui)(dui)電(dian)池光電(dian)性(xing)能的(de)(de)(de)(de)影響。由于其高(gao)摻雜度，TCO的(de)(de)(de)(de)電(dian)子(zi)行為就(jiu)像一個(ge)(ge)電(dian)荷載流子(zi)遷移(yi)率相當低的(de)(de)(de)(de)金(jin)屬，而TCO/a-Si:H結(jie)(jie)(jie)的(de)(de)(de)(de)電(dian)子(zi)行為通常(chang)被(bei)假定為類(lei)似于金(jin)屬-半導(dao)體結(jie)(jie)(jie)。 TCO的(de)(de)(de)(de)功函數對(dui)(dui)TCO/a-Si:H/c-Si結(jie)(jie)(jie)構中的(de)(de)(de)(de)帶狀排(pai)列以及電(dian)荷載流子(zi)在(zai)異(yi)(yi)(yi)質(zhi)結(jie)(jie)(jie)上(shang)的(de)(de)(de)(de)傳輸起(qi)著重要作用(yong)。此(ci)外，TCO在(zai)大約10納(na)米(mi)薄的(de)(de)(de)(de)a-Si:H上(shang)的(de)(de)(de)(de)沉積通常(chang)采用(yong)濺射工藝(yi)(yi)；在(zai)此(ci)，應該(gai)考(kao)慮(lv)到在(zai)該(gai)濺射工藝(yi)(yi)中損壞(huai)脆弱的(de)(de)(de)(de)a-Si:H/c-Si界(jie)面(mian)的(de)(de)(de)(de)可(ke)能性(xing)，并且在(zai)工藝(yi)(yi)優(you)化中必(bi)須考(kao)慮(lv)到。杭州單晶硅異(yi)(yi)(yi)質(zhi)結(jie)(jie)(jie)設備廠家

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