一(yi)般(ban)來說，它是一(yi)個(ge)去耦(ou)電容(rong)(rong)(rong)。或(huo)者數(shu)字電路(lu)通斷(duan)時，對電源影(ying)響很大，造成電源波動，需要(yao)(yao)用(yong)(yong)電容(rong)(rong)(rong)去耦(ou)。通常，容(rong)(rong)(rong)量(liang)是芯片(pian)開(kai)關(guan)頻(pin)(pin)(pin)率的(de)(de)倒(dao)數(shu)。如果(guo)頻(pin)(pin)(pin)率為1MHz，選(xuan)擇(ze)1/1M，即(ji)1uF。你(ni)可(ke)以(yi)(yi)拿一(yi)個(ge)大一(yi)點的(de)(de)。比較(jiao)好有(you)芯片(pian)和去耦(ou)電容(rong)(rong)(rong)，電源處應該有(you)，用(yong)(yong)的(de)(de)量(liang)還(huan)是蠻大的(de)(de)。在(zai)(zai)一(yi)般(ban)設(she)計中，提到通常使用(yong)(yong)0.1uF和10uF、2.2uF和47uF進行電源去耦(ou)。在(zai)(zai)實際應用(yong)(yong)中如何選(xuan)擇(ze)它們(men)？根據不同(tong)的(de)(de)功率輸出或(huo)后續電路(lu)？通常并(bing)聯(lian)兩個(ge)電容(rong)(rong)(rong)就夠了，但在(zai)(zai)某些電路(lu)中并(bing)聯(lian)更(geng)多(duo)的(de)(de)電容(rong)(rong)(rong)可(ke)能會更(geng)好。不同(tong)電容(rong)(rong)(rong)值的(de)(de)電容(rong)(rong)(rong)器并(bing)聯(lian)可(ke)以(yi)(yi)在(zai)(zai)很寬的(de)(de)頻(pin)(pin)(pin)率范圍(wei)內(nei)保證較(jiao)低的(de)(de)交流阻抗。在(zai)(zai)運算放(fang)大器的(de)(de)電源抑制(PSR)能力下(xia)降的(de)(de)頻(pin)(pin)(pin)率范圍(wei)內(nei)，電源旁路(lu)尤為重要(yao)(yao)。電容(rong)(rong)(rong)可(ke)以(yi)(yi)補(bu)償放(fang)大器PSR的(de)(de)下(xia)降。在(zai)(zai)很寬的(de)(de)頻(pin)(pin)(pin)率范圍(wei)內(nei)，這(zhe)種(zhong)低阻路(lu)徑可(ke)以(yi)(yi)保證噪聲不進入芯片(pian)。陶(tao)瓷介質(zhi)電容(rong)(rong)(rong)器的(de)(de)絕緣體材料主要(yao)(yao)使用(yong)(yong)陶(tao)瓷。無(wu)錫片(pian)式多(duo)層陶(tao)瓷電容(rong)(rong)(rong)器規(gui)格

在較低(di)(di)(di)頻(pin)(pin)率下，較大(da)的(de)(de)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)可以提供低(di)(di)(di)電(dian)(dian)(dian)(dian)(dian)阻接(jie)地(di)路(lu)徑(jing)。一旦這些電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)達(da)到自諧振頻(pin)(pin)率，它們(men)的(de)(de)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)特性就(jiu)消(xiao)失了，它們(men)變成了具(ju)有電(dian)(dian)(dian)(dian)(dian)感特性的(de)(de)元件。這就(jiu)是并(bing)聯使(shi)用多(duo)個(ge)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)的(de)(de)主要原因，可以在很寬的(de)(de)頻(pin)(pin)率范圍內(nei)保持較低(di)(di)(di)的(de)(de)交流阻抗(kang)(kang)。芯片(pian)電(dian)(dian)(dian)(dian)(dian)源要求(qiu)(qiu)電(dian)(dian)(dian)(dian)(dian)源穩(wen)定，但實際(ji)電(dian)(dian)(dian)(dian)(dian)源不穩(wen)定，高(gao)頻(pin)(pin)低(di)(di)(di)頻(pin)(pin)干(gan)擾混雜。實際(ji)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)與(yu)理想電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)大(da)相徑(jing)庭(ting)，具(ju)有RLC三重性質。10uf的(de)(de)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)對低(di)(di)(di)頻(pin)(pin)干(gan)擾的(de)(de)過濾(lv)(lv)效(xiao)果(guo)很好，但對于高(gao)頻(pin)(pin)干(gan)擾，電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)是感性的(de)(de)，阻抗(kang)(kang)太(tai)大(da)無法有效(xiao)濾(lv)(lv)除，所以組合一個(ge)0.1uf的(de)(de)電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)濾(lv)(lv)除高(gao)頻(pin)(pin)成分(fen)。如(ru)果(guo)你的(de)(de)設計要求(qiu)(qiu)不高(gao)，沒必(bi)要完全遵守這個(ge)規則。宿遷固態鋁電(dian)(dian)(dian)(dian)(dian)解電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)哪家便宜(yi)當電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器內(nei)部的(de)(de)連接(jie)性能變差或失效(xiao)時，通(tong)常就(jiu)會發生開路(lu)。

可靠度等(deng)級開(kai)關(guan)(guan)(guan)(guan)電(dian)(dian)(dian)源是(shi)一種由開(kai)關(guan)(guan)(guan)(guan)模式(shi)控制的(de)(de)(de)(de)(de)DC穩壓(ya)電(dian)(dian)(dian)源。它體(ti)積小、重(zhong)量輕(qing)、效(xiao)(xiao)(xiao)(xiao)率高，廣泛應用(yong)于(yu)各種通訊(xun)設(she)備、家用(yong)電(dian)(dian)(dian)器(qi)、計算(suan)機(ji)及其(qi)終(zhong)端(duan)設(she)備。作為具有輸入濾波平滑功能的(de)(de)(de)(de)(de)鋁(lv)(lv)電(dian)(dian)(dian)解(jie)電(dian)(dian)(dian)容器(qi)，其(qi)質(zhi)量和(he)(he)(he)可靠性(xing)直接影響開(kai)關(guan)(guan)(guan)(guan)電(dian)(dian)(dian)源的(de)(de)(de)(de)(de)可靠性(xing)。鋁(lv)(lv)電(dian)(dian)(dian)解(jie)電(dian)(dian)(dian)容器(qi)一旦失(shi)(shi)(shi)效(xiao)(xiao)(xiao)(xiao)，就會導(dao)致開(kai)關(guan)(guan)(guan)(guan)電(dian)(dian)(dian)源的(de)(de)(de)(de)(de)失(shi)(shi)(shi)效(xiao)(xiao)(xiao)(xiao)。開(kai)關(guan)(guan)(guan)(guan)穩壓(ya)電(dian)(dian)(dian)源用(yong)鋁(lv)(lv)電(dian)(dian)(dian)解(jie)電(dian)(dian)(dian)容器(qi)的(de)(de)(de)(de)(de)失(shi)(shi)(shi)效(xiao)(xiao)(xiao)(xiao)模式(shi)包括擊(ji)(ji)穿失(shi)(shi)(shi)效(xiao)(xiao)(xiao)(xiao)、開(kai)路失(shi)(shi)(shi)效(xiao)(xiao)(xiao)(xiao)、漏(lou)液(ye)失(shi)(shi)(shi)效(xiao)(xiao)(xiao)(xiao)和(he)(he)(he)電(dian)(dian)(dian)參數超差失(shi)(shi)(shi)效(xiao)(xiao)(xiao)(xiao)。其(qi)中，擊(ji)(ji)穿失(shi)(shi)(shi)效(xiao)(xiao)(xiao)(xiao)分為介質(zhi)擊(ji)(ji)穿和(he)(he)(he)熱擊(ji)(ji)穿。對于(yu)大(da)功率大(da)電(dian)(dian)(dian)流輸出的(de)(de)(de)(de)(de)電(dian)(dian)(dian)解(jie)電(dian)(dian)(dian)容器(qi)，熱擊(ji)(ji)穿失(shi)(shi)(shi)效(xiao)(xiao)(xiao)(xiao)往往占一定比例。開(kai)關(guan)(guan)(guan)(guan)穩壓(ya)電(dian)(dian)(dian)源用(yong)鋁(lv)(lv)電(dian)(dian)(dian)解(jie)電(dian)(dian)(dian)容器(qi)的(de)(de)(de)(de)(de)主要失(shi)(shi)(shi)效(xiao)(xiao)(xiao)(xiao)形(xing)式(shi)是(shi)電(dian)(dian)(dian)腐蝕導(dao)致鋁(lv)(lv)鉛條斷裂和(he)(he)(he)電(dian)(dian)(dian)容器(qi)芯子干透。漏(lou)液(ye)是(shi)開(kai)關(guan)(guan)(guan)(guan)穩壓(ya)電(dian)(dian)(dian)源用(yong)鋁(lv)(lv)電(dian)(dian)(dian)解(jie)電(dian)(dian)(dian)容器(qi)的(de)(de)(de)(de)(de)常見(jian)故障(zhang)形(xing)式(shi)。由于(yu)惡劣的(de)(de)(de)(de)(de)使用(yong)環(huan)境和(he)(he)(he)工(gong)作條件(jian)，液(ye)體(ti)泄漏(lou)故障(zhang)時有發生。開(kai)關(guan)(guan)(guan)(guan)穩壓(ya)電(dian)(dian)(dian)源用(yong)鋁(lv)(lv)電(dian)(dian)(dian)解(jie)電(dian)(dian)(dian)容器(qi)較常見(jian)的(de)(de)(de)(de)(de)失(shi)(shi)(shi)效(xiao)(xiao)(xiao)(xiao)模式(shi)是(shi)電(dian)(dian)(dian)容減小、漏(lou)電(dian)(dian)(dian)流增(zeng)大(da)、損(sun)耗角正(zheng)切增(zeng)大(da)。

鉭(tan)電(dian)(dian)(dian)容(rong)器(qi)(qi)(qi)的(de)(de)(de)(de)(de)溫(wen)(wen)度(du)(du)穩定(ding)性(xing)(xing)更(geng)好。在(zai)一些耦合和(he)濾(lv)波的(de)(de)(de)(de)(de)場景(jing)中，如果要求濾(lv)波的(de)(de)(de)(de)(de)相位和(he)頻(pin)率特性(xing)(xing)高(gao)，要求容(rong)量(liang)精度(du)(du)高(gao)，就(jiu)會(hui)選擇無極(ji)(ji)性(xing)(xing)鉭(tan)電(dian)(dian)(dian)容(rong)器(qi)(qi)(qi)。比如對音(yin)質要求高(gao)的(de)(de)(de)(de)(de)音(yin)頻(pin)電(dian)(dian)(dian)路設計。我們需要考慮不同溫(wen)(wen)度(du)(du)下(xia)電(dian)(dian)(dian)容(rong)的(de)(de)(de)(de)(de)準確(que)性(xing)(xing)和(he)一致性(xing)(xing)。陶瓷電(dian)(dian)(dian)容(rong)的(de)(de)(de)(de)(de)溫(wen)(wen)度(du)(du)特性(xing)(xing)明(ming)顯不夠穩定(ding)。在(zai)鉭(tan)電(dian)(dian)(dian)容(rong)器(qi)(qi)(qi)的(de)(de)(de)(de)(de)工作(zuo)過程(cheng)中，具有(you)自動修復(fu)(fu)或隔離氧化(hua)膜(mo)中缺陷(xian)的(de)(de)(de)(de)(de)功(gong)能(neng)(neng)(neng)，使(shi)氧化(hua)膜(mo)介質隨(sui)時得到(dao)增(zeng)強并恢(hui)復(fu)(fu)到(dao)其(qi)應有(you)的(de)(de)(de)(de)(de)絕緣能(neng)(neng)(neng)力，而(er)不會(hui)產生持續(xu)的(de)(de)(de)(de)(de)累積損傷。這種獨特的(de)(de)(de)(de)(de)自愈性(xing)(xing)能(neng)(neng)(neng)確(que)保了(le)其(qi)長壽(shou)命和(he)可靠性(xing)(xing)的(de)(de)(de)(de)(de)優(you)勢。鋁(lv)電(dian)(dian)(dian)解(jie)電(dian)(dian)(dian)容(rong)器(qi)(qi)(qi)因干涸達不到(dao)使(shi)用壽(shou)命。鉭(tan)電(dian)(dian)(dian)容(rong)器(qi)(qi)(qi)的(de)(de)(de)(de)(de)失效(xiao)模式很可怕，從(cong)燃燒到(dao)冒煙，再到(dao)火焰。通過這個故障的(de)(de)(de)(de)(de)現(xian)象我們知道(dao)，如果電(dian)(dian)(dian)容(rong)出現(xian)故障，只是(shi)短(duan)路導致電(dian)(dian)(dian)路無法工作(zuo)，或者是(shi)不穩定(ding)，這都是(shi)小問(wen)(wen)題，大(da)不了(le)退(tui)貨。但(dan)如果客戶現(xian)場發生火災，就(jiu)要賠償對方(fang)的(de)(de)(de)(de)(de)人(ren)員和(he)財產損失。這將(jiang)是(shi)一個大(da)問(wen)(wen)題。電(dian)(dian)(dian)容(rong)器(qi)(qi)(qi)的(de)(de)(de)(de)(de)電(dian)(dian)(dian)容(rong)量(liang)在(zai)數值上等于一個導電(dian)(dian)(dian)極(ji)(ji)板(ban)上的(de)(de)(de)(de)(de)電(dian)(dian)(dian)荷量(liang)與兩(liang)個極(ji)(ji)板(ban)之間的(de)(de)(de)(de)(de)電(dian)(dian)(dian)壓之比。

微型電(dian)(dian)(dian)極結構(gou)方面(mian)，將電(dian)(dian)(dian)極做成立(li)體三維(wei)結構(gou)可獲得更年(nian)夜(ye)的(de)概況積，有(you)利(li)于負載更多的(de)電(dian)(dian)(dian)極活性物(wu)質(zhi)以及保(bao)證活性物(wu)質(zhi)的(de)充實操(cao)作，從(cong)而有(you)利(li)于改善電(dian)(dian)(dian)荷(he)存儲機能。本(ben)所庖代的(de)歷次版本(ben)發(fa)布(bu)情形為(wei)(wei)：——ｇｂ６跟著(zhu)材(cai)(cai)料科學(xue)的(de)發(fa)展，電(dian)(dian)(dian)容器逐漸向(xiang)高(gao)儲能、小型化、輕(qing)質(zhi)量(liang)、低(di)(di)成本(ben)、高(gao)靠得住性等標的(de)目的(de)成長(chang)，近(jin)年(nian)來(lai)，跟著(zhu)情形呵護(hu)的(de)呼聲越來(lai)越高(gao)，含鉛材(cai)(cai)料受到了極年(nian)夜(ye)的(de)限(xian)制(zhi)(zhi)，傳統的(de)pzt基(ji)壓電(dian)(dian)(dian)陶(tao)瓷(ci)由于含有(you)年(nian)夜(ye)量(liang)的(de)pb，其制(zhi)(zhi)造和使用已經被限(xian)制(zhi)(zhi)，batio３基(ji)陶(tao)瓷(ci)材(cai)(cai)料再次成為(wei)(wei)研究的(de)熱點。因為(wei)(wei)界面(mian)上存在位(wei)壘(lei)，兩層(ceng)電(dian)(dian)(dian)荷(he)不(bu)能越過鴻(hong)溝(gou)彼(bi)其中和，從(cong)而形成了雙電(dian)(dian)(dian)層(ceng)電(dian)(dian)(dian)容[５]。１雙電(dian)(dian)(dian)層(ceng)電(dian)(dian)(dian)容理(li)論１８５３年(nian)德(de)國(guo)物(wu)理(li)學(xue)家helmhotz首先提(ti)出了雙電(dian)(dian)(dian)層(ceng)電(dian)(dian)(dian)容這(zhe)(zhe)一(yi)概念[６]。用這(zhe)(zhe)種超級為(wei)(wei)一(yi)部iphone手機布(bu)滿(man)電(dian)(dian)(dian)只只需要５秒鐘。但因為(wei)(wei)電(dian)(dian)(dian)介質(zhi)耐壓低(di)(di)，存在漏(lou)電(dian)(dian)(dian)流，儲存能量(liang)和連(lian)結時(shi)刻受到限(xian)制(zhi)(zhi)。但這(zhe)(zhe)種電(dian)(dian)(dian)極材(cai)(cai)料的(de)制(zhi)(zhi)備工藝(yi)繁復(fu)，耗時(shi)長(chang)，價錢昂貴(gui)，商(shang)品化還有(you)必然距離。MLCC 它是電(dian)(dian)(dian)子信息(xi)產業較(jiao)為(wei)(wei)重要的(de)電(dian)(dian)(dian)子元件(jian)之(zhi)一(yi)。鎮江(jiang)固(gu)態電(dian)(dian)(dian)解電(dian)(dian)(dian)容批發(fa)

陶瓷電容器從介質類(lei)型(xing)主(zhu)要(yao)可以分為兩類(lei)，即(ji)Ⅰ類(lei)陶瓷電容器和Ⅱ類(lei)陶瓷電容器。無錫片式多(duo)層陶瓷電容器規格

MLCC除有電容(rong)器(qi)“隔直(zhi)通交”的(de)通性特點外，其還有體(ti)積小，比容(rong)大，壽(shou)命長，可(ke)靠(kao)性高，適(shi)合表(biao)面(mian)安裝等(deng)特點。隨(sui)著世界(jie)電子(zi)(zi)(zi)行(xing)業的(de)飛速(su)發(fa)展(zhan)，作為電子(zi)(zi)(zi)行(xing)業的(de)基(ji)礎(chu)元件，片(pian)(pian)式(shi)(shi)電容(rong)器(qi)也以(yi)驚人的(de)速(su)度向前發(fa)展(zhan)，每年以(yi)10%～15%的(de)速(su)度遞增。目(mu)前，世界(jie)片(pian)(pian)式(shi)(shi)電容(rong)的(de)需求(qiu)量(liang)在2000億支以(yi)上(shang)，70%出(chu)自日本(ben)（如MLCC大廠村田muRata），其次是歐美和東(dong)南亞（含中(zhong)國）。隨(sui)著片(pian)(pian)容(rong)產品可(ke)靠(kao)性和集成度的(de)提高，其使用的(de)范圍越來越廣，普(pu)遍地應用于各種軍民用電子(zi)(zi)(zi)整機和電子(zi)(zi)(zi)設備。如電腦、電話、程(cheng)控交換機、精(jing)密的(de)測試儀器(qi)、雷達通信等(deng)。無錫片(pian)(pian)式(shi)(shi)多層陶瓷電容(rong)器(qi)規(gui)格

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