異(yi)質(zhi)結電(dian)(dian)(dian)池(chi)生(sheng)產(chan)流程(cheng)與常規(gui)晶硅(gui)(gui)(gui)(gui)工(gong)藝的(de)(de)區別。常規(gui)晶硅(gui)(gui)(gui)(gui)工(gong)藝：1、清(qing)洗制絨(rong)。通過(guo)腐蝕去(qu)除表(biao)面(mian)損傷層，并且(qie)在(zai)表(biao)面(mian)進(jin)行(xing)制絨(rong)，以形(xing)(xing)成絨(rong)面(mian)結構達到(dao)陷光(guang)效(xiao)果，減(jian)少反射(she)(she)損失；2、擴散(san)制結。通過(guo)熱擴散(san)等(deng)方法在(zai)硅(gui)(gui)(gui)(gui)片(pian)上(shang)形(xing)(xing)成不同導電(dian)(dian)(dian)類(lei)型的(de)(de)擴散(san)層，以形(xing)(xing)成p-n結；3、刻蝕去(qu)邊。去(qu)除擴散(san)后硅(gui)(gui)(gui)(gui)片(pian)周邊的(de)(de)邊緣結；4、去(qu)磷(lin)硅(gui)(gui)(gui)(gui)玻璃。擴散(san)過(guo)程(cheng)中，在(zai)硅(gui)(gui)(gui)(gui)片(pian)表(biao)面(mian)會(hui)形(xing)(xing)成一層含磷(lin)的(de)(de)氧化硅(gui)(gui)(gui)(gui)，稱為(wei)磷(lin)硅(gui)(gui)(gui)(gui)玻璃（PSG），需要用氫氟酸腐蝕去(qu)掉(diao)；5、鍍減(jian)反射(she)(she)膜(mo)。為(wei)進(jin)行(xing)一步(bu)提高對光(guang)的(de)(de)吸收，在(zai)硅(gui)(gui)(gui)(gui)片(pian)表(biao)面(mian)覆蓋(gai)一層減(jian)反射(she)(she)膜(mo)。常用PECVD進(jin)行(xing)SiNx薄膜(mo)沉積，同時起(qi)到(dao)鈍化的(de)(de)作用；6、柵(zha)線電(dian)(dian)(dian)極(ji)。在(zai)電(dian)(dian)(dian)池(chi)正面(mian)用絲網印刷進(jin)行(xing)柵(zha)線電(dian)(dian)(dian)極(ji)制作，在(zai)背面(mian)印刷背場(BSF)和背電(dian)(dian)(dian)極(ji)，并且(qie)進(jin)行(xing)干(gan)燥和燒結；7、電(dian)(dian)(dian)池(chi)測(ce)試及分選。零界高效(xiao)異(yi)質(zhi)結電(dian)(dian)(dian)池(chi)整(zheng)線設備導入(ru)銅(tong)制程(cheng)電(dian)(dian)(dian)池(chi)等(deng)多(duo)項技術，降(jiang)低非硅(gui)(gui)(gui)(gui)成本。蘇州異(yi)質(zhi)結設備

異(yi)質(zhi)(zhi)結(jie)(jie)(jie)電(dian)(dian)(dian)(dian)池(chi)(chi)（HJT電(dian)(dian)(dian)(dian)池(chi)(chi)）的(de)(de)(de)(de)(de)特點(dian)和優(you)勢(shi)1、無PID現象由于(yu)電(dian)(dian)(dian)(dian)池(chi)(chi)上表面(mian)(mian)為TCO，電(dian)(dian)(dian)(dian)荷不會(hui)(hui)在電(dian)(dian)(dian)(dian)池(chi)(chi)表面(mian)(mian)的(de)(de)(de)(de)(de)TCO上產(chan)生(sheng)(sheng)極化(hua)現象，無PID現象。同(tong)時實(shi)測數據(ju)也證實(shi)了這一(yi)點(dian)。異(yi)質(zhi)(zhi)結(jie)(jie)(jie)太(tai)陽(yang)能電(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)(de)(de)(de)技術應(ying)(ying)用(yong)與(yu)前景(jing)2、低(di)溫(wen)(wen)制(zhi)造工(gong)(gong)藝HJT電(dian)(dian)(dian)(dian)池(chi)(chi)所(suo)有制(zhi)程(cheng)的(de)(de)(de)(de)(de)加工(gong)(gong)溫(wen)(wen)度均低(di)于(yu)250，避(bi)免(mian)了生(sheng)(sheng)產(chan)效(xiao)率(lv)低(di)而成(cheng)本高(gao)的(de)(de)(de)(de)(de)高(gao)溫(wen)(wen)擴散(san)制(zhi)結(jie)(jie)(jie)的(de)(de)(de)(de)(de)過(guo)程(cheng)，而且(qie)低(di)溫(wen)(wen)工(gong)(gong)藝使得(de)a-Si薄膜的(de)(de)(de)(de)(de)光(guang)(guang)學(xue)帶(dai)隙、沉積速率(lv)、吸收系數以(yi)及氫(qing)含量得(de)到較(jiao)精確的(de)(de)(de)(de)(de)控(kong)制(zhi)，也可(ke)避(bi)免(mian)因(yin)高(gao)溫(wen)(wen)導致的(de)(de)(de)(de)(de)熱應(ying)(ying)力等(deng)不良影響。3、高(gao)效(xiao)率(lv)HJT電(dian)(dian)(dian)(dian)池(chi)(chi)一(yi)直在刷新著(zhu)量產(chan)的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)池(chi)(chi)轉換效(xiao)率(lv)的(de)(de)(de)(de)(de)世界紀(ji)錄。HJT電(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)(de)(de)(de)效(xiao)率(lv)比P型單晶硅(gui)電(dian)(dian)(dian)(dian)池(chi)(chi)高(gao)1-2%，而且(qie)之間(jian)的(de)(de)(de)(de)(de)差(cha)異(yi)在慢慢增大。4、高(gao)光(guang)(guang)照穩(wen)定(ding)性異(yi)質(zhi)(zhi)結(jie)(jie)(jie)太(tai)陽(yang)能電(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)(de)(de)(de)技術應(ying)(ying)用(yong)與(yu)前景(jing)在HJT太(tai)陽(yang)能電(dian)(dian)(dian)(dian)池(chi)(chi)中不會(hui)(hui)出(chu)現非(fei)晶硅(gui)太(tai)陽(yang)能電(dian)(dian)(dian)(dian)池(chi)(chi)中常(chang)見的(de)(de)(de)(de)(de)Staebler-Wronski效(xiao)應(ying)(ying)。同(tong)時HJT電(dian)(dian)(dian)(dian)池(chi)(chi)采(cai)用(yong)的(de)(de)(de)(de)(de)N型硅(gui)片，摻雜劑為磷，幾乎無光(guang)(guang)致衰(shuai)減現象。5、可(ke)向(xiang)薄型化(hua)發展HJT電(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)(de)(de)(de)制(zhi)程(cheng)溫(wen)(wen)度低(di)，上下表面(mian)(mian)結(jie)(jie)(jie)構對稱，無機(ji)械應(ying)(ying)力產(chan)生(sheng)(sheng)，可(ke)以(yi)順利實(shi)現薄型化(hua)；另外經研(yan)究(jiu)，對于(yu)少子壽命較(jiao)高(gao)（SRV<100cm/s）的(de)(de)(de)(de)(de)N型硅(gui)基底，片子越薄可(ke)以(yi)得(de)到越高(gao)的(de)(de)(de)(de)(de)開路電(dian)(dian)(dian)(dian)壓。杭州國產(chan)異(yi)質(zhi)(zhi)結(jie)(jie)(jie)PVD光(guang)(guang)伏異(yi)質(zhi)(zhi)結(jie)(jie)(jie)是一(yi)種(zhong)高(gao)效(xiao)太(tai)陽(yang)能電(dian)(dian)(dian)(dian)池(chi)(chi)，具有雙(shuang)面(mian)(mian)發電(dian)(dian)(dian)(dian)和低(di)光(guang)(guang)衰(shuai)減等(deng)優(you)點(dian)。

光(guang)(guang)伏異(yi)質(zhi)(zhi)結(jie)(jie)(jie)是一種(zhong)(zhong)(zhong)(zhong)由不(bu)(bu)同(tong)材(cai)(cai)料組成的(de)(de)(de)(de)太陽(yang)能(neng)(neng)電(dian)(dian)池(chi)結(jie)(jie)(jie)構。它由兩種(zhong)(zhong)(zhong)(zhong)或更多(duo)種(zhong)(zhong)(zhong)(zhong)不(bu)(bu)同(tong)的(de)(de)(de)(de)半導(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)材(cai)(cai)料組成，其中一種(zhong)(zhong)(zhong)(zhong)是p型(xing)半導(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)，另一種(zhong)(zhong)(zhong)(zhong)是n型(xing)半導(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)。這(zhe)兩種(zhong)(zhong)(zhong)(zhong)半導(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)材(cai)(cai)料的(de)(de)(de)(de)電(dian)(dian)子結(jie)(jie)(jie)構不(bu)(bu)同(tong)，因此(ci)它們的(de)(de)(de)(de)導(dao)(dao)(dao)(dao)電(dian)(dian)性(xing)質(zhi)(zhi)也(ye)不(bu)(bu)同(tong)。在(zai)光(guang)(guang)伏異(yi)質(zhi)(zhi)結(jie)(jie)(jie)中，p型(xing)半導(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)和n型(xing)半導(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)之(zhi)間形(xing)成了一個(ge)pn結(jie)(jie)(jie)，這(zhe)是一個(ge)具(ju)有(you)特殊電(dian)(dian)學性(xing)質(zhi)(zhi)的(de)(de)(de)(de)界面。當光(guang)(guang)線照射到光(guang)(guang)伏異(yi)質(zhi)(zhi)結(jie)(jie)(jie)上時，光(guang)(guang)子會被吸(xi)收并(bing)激(ji)發(fa)出電(dian)(dian)子和空穴(xue)。由于pn結(jie)(jie)(jie)的(de)(de)(de)(de)存在(zai)，電(dian)(dian)子和空穴(xue)會被分離，電(dian)(dian)子會向(xiang)n型(xing)半導(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)移動(dong)，空穴(xue)會向(xiang)p型(xing)半導(dao)(dao)(dao)(dao)體(ti)(ti)(ti)(ti)移動(dong)。這(zhe)種(zhong)(zhong)(zhong)(zhong)電(dian)(dian)子和空穴(xue)的(de)(de)(de)(de)分離會產生電(dian)(dian)勢差，從而產生電(dian)(dian)流(liu)。這(zhe)就是光(guang)(guang)伏異(yi)質(zhi)(zhi)結(jie)(jie)(jie)的(de)(de)(de)(de)工作原理。光(guang)(guang)伏異(yi)質(zhi)(zhi)結(jie)(jie)(jie)具(ju)有(you)高效率(lv)、長壽命(ming)、低成本等(deng)優點，因此(ci)被廣(guang)泛(fan)應用(yong)于太陽(yang)能(neng)(neng)電(dian)(dian)池(chi)、太陽(yang)能(neng)(neng)電(dian)(dian)池(chi)板(ban)、太陽(yang)能(neng)(neng)電(dian)(dian)池(chi)組等(deng)領域。隨(sui)著技術的(de)(de)(de)(de)不(bu)(bu)斷(duan)進步，光(guang)(guang)伏異(yi)質(zhi)(zhi)結(jie)(jie)(jie)的(de)(de)(de)(de)效率(lv)和性(xing)能(neng)(neng)將不(bu)(bu)斷(duan)提高，為太陽(yang)能(neng)(neng)產業的(de)(de)(de)(de)發(fa)展提供更多(duo)的(de)(de)(de)(de)可能(neng)(neng)性(xing)。

光(guang)(guang)(guang)(guang)伏(fu)異(yi)質結(jie)(jie)(jie)(jie)的(de)(de)(de)(de)(de)光(guang)(guang)(guang)(guang)吸收機(ji)制是(shi)基于(yu)半(ban)導體(ti)(ti)材料(liao)的(de)(de)(de)(de)(de)能(neng)(neng)帶(dai)結(jie)(jie)(jie)(jie)構(gou)(gou)和光(guang)(guang)(guang)(guang)子(zi)能(neng)(neng)量的(de)(de)(de)(de)(de)匹配原理。當光(guang)(guang)(guang)(guang)子(zi)能(neng)(neng)量與半(ban)導體(ti)(ti)材料(liao)的(de)(de)(de)(de)(de)能(neng)(neng)帶(dai)結(jie)(jie)(jie)(jie)構(gou)(gou)相匹配時，光(guang)(guang)(guang)(guang)子(zi)會被吸收并激發出電(dian)(dian)子(zi)和空穴(xue)對，從而產(chan)生光(guang)(guang)(guang)(guang)電(dian)(dian)效應。在(zai)光(guang)(guang)(guang)(guang)伏(fu)異(yi)質結(jie)(jie)(jie)(jie)中，通常采用(yong)p-n結(jie)(jie)(jie)(jie)構(gou)(gou)，即將p型(xing)(xing)半(ban)導體(ti)(ti)和n型(xing)(xing)半(ban)導體(ti)(ti)通過界(jie)面結(jie)(jie)(jie)(jie)合形成異(yi)質結(jie)(jie)(jie)(jie)。當光(guang)(guang)(guang)(guang)子(zi)進入(ru)異(yi)質結(jie)(jie)(jie)(jie)時，會被p-n結(jie)(jie)(jie)(jie)的(de)(de)(de)(de)(de)電(dian)(dian)場分(fen)離，使電(dian)(dian)子(zi)和空穴(xue)分(fen)別向p型(xing)(xing)和n型(xing)(xing)半(ban)導體(ti)(ti)移動(dong)，從而產(chan)生電(dian)(dian)流。此外，光(guang)(guang)(guang)(guang)伏(fu)異(yi)質結(jie)(jie)(jie)(jie)的(de)(de)(de)(de)(de)光(guang)(guang)(guang)(guang)吸收機(ji)制還與材料(liao)的(de)(de)(de)(de)(de)光(guang)(guang)(guang)(guang)學(xue)性(xing)質有關，如折射(she)率、吸收系(xi)數(shu)等(deng)。因此，在(zai)設計光(guang)(guang)(guang)(guang)伏(fu)異(yi)質結(jie)(jie)(jie)(jie)時，需要考慮材料(liao)的(de)(de)(de)(de)(de)能(neng)(neng)帶(dai)結(jie)(jie)(jie)(jie)構(gou)(gou)、光(guang)(guang)(guang)(guang)學(xue)性(xing)質以及p-n結(jie)(jie)(jie)(jie)的(de)(de)(de)(de)(de)結(jie)(jie)(jie)(jie)構(gou)(gou)參數(shu)等(deng)因素(su)，以實現高(gao)效的(de)(de)(de)(de)(de)光(guang)(guang)(guang)(guang)電(dian)(dian)轉換。高(gao)效異(yi)質結(jie)(jie)(jie)(jie)電(dian)(dian)池PECVD設備(bei)是(shi)制備(bei)微(wei)晶硅的(de)(de)(de)(de)(de)設備(bei)，其工藝(yi)機(ji)理復雜，影響因素(su)眾(zhong)多，需要專業公(gong)司制備(bei)。

異(yi)質結電(dian)池(chi)工藝 1.清(qing)洗制(zhi)絨(rong)(rong)。通(tong)(tong)過(guo)(guo)腐蝕去除表面(mian)(mian)(mian)(mian)損傷層(ceng)(ceng)，并(bing)且(qie)在(zai)表面(mian)(mian)(mian)(mian)進(jin)行(xing)制(zhi)絨(rong)(rong)，以形成(cheng)絨(rong)(rong)面(mian)(mian)(mian)(mian)結構達到陷光效(xiao)果，減少(shao)反射損失；2.正(zheng)面(mian)(mian)(mian)(mian)/背(bei)面(mian)(mian)(mian)(mian)非晶硅薄(bo)膜(mo)(mo)沉(chen)積(ji)。通(tong)(tong)過(guo)(guo)CVD方(fang)式(shi)在(zai)正(zheng)面(mian)(mian)(mian)(mian)/背(bei)面(mian)(mian)(mian)(mian)分別(bie)沉(chen)積(ji)5~10nm的本征a-Si:H，作(zuo)為(wei)鈍(dun)化(hua)層(ceng)(ceng)，然(ran)后再沉(chen)積(ji)摻雜層(ceng)(ceng)；3.正(zheng)面(mian)(mian)(mian)(mian)/背(bei)面(mian)(mian)(mian)(mian)TCO沉(chen)積(ji)。通(tong)(tong)過(guo)(guo)PVD在(zai)鈍(dun)化(hua)層(ceng)(ceng)上面(mian)(mian)(mian)(mian)進(jin)行(xing)TCO薄(bo)膜(mo)(mo)沉(chen)積(ji)；4.柵線(xian)(xian)電(dian)極(ji)。通(tong)(tong)過(guo)(guo)絲(si)網印(yin)刷進(jin)行(xing)柵線(xian)(xian)電(dian)極(ji)制(zhi)作(zuo)；5.烘烤(退火)。通(tong)(tong)過(guo)(guo)絲(si)網印(yin)刷進(jin)行(xing)正(zheng)面(mian)(mian)(mian)(mian)柵線(xian)(xian)電(dian)極(ji)制(zhi)作(zuo)，然(ran)后通(tong)(tong)過(guo)(guo)低(di)溫燒(shao)結形成(cheng)良好的接觸(chu)；6.光注入。7.電(dian)池(chi)測(ce)試(shi)及(ji)分選。異(yi)質結電(dian)池(chi)能夠充分利用太陽(yang)能資源，為(wei)人(ren)類創造(zao)更多的清(qing)潔(jie)能源和經濟效(xiao)益(yi)。鈣鈦礦異(yi)質結材料

光(guang)伏(fu)異質結技術(shu)的廣泛應(ying)用能夠推動光(guang)伏(fu)產業的創新發展，促進科技進步和(he)經濟增長。蘇州異質結設備

太(tai)(tai)(tai)(tai)陽(yang)(yang)(yang)能(neng)(neng)異(yi)(yi)(yi)質(zhi)(zhi)結電(dian)(dian)(dian)池(chi)(chi)(chi)是一種新型(xing)的(de)太(tai)(tai)(tai)(tai)陽(yang)(yang)(yang)能(neng)(neng)電(dian)(dian)(dian)池(chi)(chi)(chi)，相比于(yu)傳統(tong)(tong)的(de)硅基(ji)太(tai)(tai)(tai)(tai)陽(yang)(yang)(yang)能(neng)(neng)電(dian)(dian)(dian)池(chi)(chi)(chi)和其他新型(xing)太(tai)(tai)(tai)(tai)陽(yang)(yang)(yang)能(neng)(neng)電(dian)(dian)(dian)池(chi)(chi)(chi)，具有以(yi)下(xia)優(you)勢：1.高效率(lv)：太(tai)(tai)(tai)(tai)陽(yang)(yang)(yang)能(neng)(neng)異(yi)(yi)(yi)質(zhi)(zhi)結電(dian)(dian)(dian)池(chi)(chi)(chi)的(de)轉(zhuan)換(huan)效率(lv)可以(yi)達到30%以(yi)上(shang)，比傳統(tong)(tong)的(de)硅基(ji)太(tai)(tai)(tai)(tai)陽(yang)(yang)(yang)能(neng)(neng)電(dian)(dian)(dian)池(chi)(chi)(chi)高出很多。2.輕薄柔性：太(tai)(tai)(tai)(tai)陽(yang)(yang)(yang)能(neng)(neng)異(yi)(yi)(yi)質(zhi)(zhi)結電(dian)(dian)(dian)池(chi)(chi)(chi)可以(yi)采用柔性材料制作，可以(yi)制成(cheng)(cheng)輕薄柔性的(de)太(tai)(tai)(tai)(tai)陽(yang)(yang)(yang)能(neng)(neng)電(dian)(dian)(dian)池(chi)(chi)(chi)，適用于(yu)各(ge)種場合。3.長壽命：太(tai)(tai)(tai)(tai)陽(yang)(yang)(yang)能(neng)(neng)異(yi)(yi)(yi)質(zhi)(zhi)結電(dian)(dian)(dian)池(chi)(chi)(chi)的(de)壽命比傳統(tong)(tong)的(de)硅基(ji)太(tai)(tai)(tai)(tai)陽(yang)(yang)(yang)能(neng)(neng)電(dian)(dian)(dian)池(chi)(chi)(chi)長，可以(yi)達到20年以(yi)上(shang)。4.低(di)(di)成(cheng)(cheng)本：太(tai)(tai)(tai)(tai)陽(yang)(yang)(yang)能(neng)(neng)異(yi)(yi)(yi)質(zhi)(zhi)結電(dian)(dian)(dian)池(chi)(chi)(chi)的(de)制造成(cheng)(cheng)本相對(dui)較低(di)(di)，可以(yi)大(da)規模生產，降低(di)(di)太(tai)(tai)(tai)(tai)陽(yang)(yang)(yang)能(neng)(neng)發電(dian)(dian)(dian)的(de)成(cheng)(cheng)本。5.環(huan)保：太(tai)(tai)(tai)(tai)陽(yang)(yang)(yang)能(neng)(neng)異(yi)(yi)(yi)質(zhi)(zhi)結電(dian)(dian)(dian)池(chi)(chi)(chi)不會產生任(ren)何污染物，是一種非(fei)常環(huan)保的(de)能(neng)(neng)源。蘇州異(yi)(yi)(yi)質(zhi)(zhi)結設備

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